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RJK60S4DPE-WS#J3-VB Product details
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Still troubled by high conduction losses and heat dissipation challenges in high-voltage system design? VBsemi RJK60S4DPE-WS#J3-VB is here to help! This TO263-packaged N-MOSFET, designed for the 600V high-voltage platform, can handle 20A continuous current with an on-resistance of only 190mΩ. Combined with SJ_Multi-EPI super-junction technology, both switching and conduction losses are optimized. Whether in industrial power supplies, photovoltaic inverters, or electric vehicle applications, it delivers excellent thermal performance and reliability, becoming the 'hardcore workhorse' of your high-voltage circuit.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | 190(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 600V (Ample margin for high voltage systems, safe and stable)
Drive Range: ±30V (Compatible with common high voltage gate drive schemes)
Threshold Voltage: 3.5V (Moderate threshold, strong anti-interference capability)
Low On-Resistance: 190mΩ @ 10V (Maintains low loss even at high voltage)
High Current Capability: 20A (Single device capability, simplifies parallel design)
Package: TO263 (Excellent for high current heat dissipation, suitable for power-dense applications)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial, better figure of merit)
Drive Range: ±30V (Compatible with common high voltage gate drive schemes)
Threshold Voltage: 3.5V (Moderate threshold, strong anti-interference capability)
Low On-Resistance: 190mΩ @ 10V (Maintains low loss even at high voltage)
High Current Capability: 20A (Single device capability, simplifies parallel design)
Package: TO263 (Excellent for high current heat dissipation, suitable for power-dense applications)
Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial, better figure of merit)
Domain and module applications：
— Six High-Voltage Scenarios, One Device
Switching Power Supply: LLC, flyback main switch, excellent efficiency and temperature rise performance
Photovoltaic Inverter: DC side boost and inversion, helping new energy generate power efficiently
Charging Pile Module: High-voltage DC-DC conversion, stable output, reducing system heat generation
Motor Drive: Industrial frequency converters, white goods compressors, reliable and durable
Onboard OBC and DC-DC: Wide temperature range, impact resistant, safeguarding new energy vehicles
UPS Uninterruptible Power Supply: High-frequency switching, fast response, ensuring power supply for critical loads RJK60S4DPE-WS#J3-VB
— High voltage, high current, easy to handle, making your power design more worry-free!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
