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SIHB20N50E-T1-GE3-VB Product details
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VBsemi SIHB20N50E-T1-GE3-VB is a Single N-channel field-effect transistor belonging to the VBsemi product series. This product features high breakdown voltage, low on-resistance, and excellent thermal stability, making it suitable for various high-voltage power conversion and power control applications. Manufactured using SJ_Multi-EPI (super-junction multi-epitaxial) technology, it has a drain-source voltage (VDS) of 600V and operates under a gate-source voltage (VGS) of ±30V. The product is packaged in TO263, suitable for industrial-grade applications requiring efficient heat dissipation and high current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | 190(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 190 mΩ
Maximum Drain Current (ID): 20A
Technology: SJ_Multi-EPI
Package: TO263
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 190 mΩ
Maximum Drain Current (ID): 20A
Technology: SJ_Multi-EPI
Package: TO263
Domain and module applications：
1. Efficient Switching Power Supply: SIHB20N50E-T1-GE3-VB is suitable for power switch circuits in high-voltage switching power supplies, such as AC-DC converters, server power supplies, and communication power supplies, significantly improving system efficiency and reliability.
2. Industrial Motor Drive: This device can be used in industrial frequency converters and motor drive modules as a high-voltage power switch, enabling precise control of motor start/stop, speed regulation, and energy feedback.
3. Photovoltaic Inverter: In photovoltaic power generation systems, this MOSFET is suitable for DC-AC inverter circuits. With 600V withstand voltage and low on-resistance, it helps achieve efficient power conversion and grid connection.
4. Electric Vehicle Charging Equipment: This product is suitable for Power Factor Correction (PFC) and high-voltage DC-DC conversion circuits in Onboard Chargers (OBC) and DC charging piles, meeting high power density and high reliability requirements.
5. UPS Uninterruptible Power Supply: In UPS systems, SIHB20N50E-T1-GE3-VB can be used in rectifier, inverter, and bypass switch circuits, ensuring stable and clean power supply for critical loads.
6. High-Voltage Battery Management and Protection: Suitable for charge/discharge control and protection modules of high-voltage battery packs, serving as a reliable switching element to ensure system safety.
7. Power Electronics Teaching and Research Platform: This device can also be used in high-voltage power electronics experimental platforms and power converter prototype development, helping engineers verify topological structures and control strategies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
