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TK16G60W5,RVQ-VB Product details
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Tired of constantly balancing efficiency and heat dissipation in high-voltage, high-current power supply designs? VBsemi TK16G60W5 breaks the deadlock! This TO263-packaged N-MOSFET, employing advanced SJ_Multi-EPI super-junction technology, achieves a low on-resistance of 280mΩ while maintaining excellent switching characteristics at 600V. With a 15A high-current capability and low loss performance, it easily enhances cost-effectiveness and efficiency in high-voltage scenarios such as industrial power supplies, charging stations, and photovoltaic inverters, making it the 'high-voltage efficiency champion' engineers can trust.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 15A | 280(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 600V (Handles high voltage applications with ease, ample margin)
Drive Range: ±30V (Compatible with various gate drive schemes)
Threshold Voltage: 3.5V (Standard logic level triggers reliably)
On-Resistance: 280mΩ @ 10V (Low conduction loss, minimal heat generation)
High Current Capability: 15A (TO263 package offers significant heat dissipation advantage)
Package: TO263 (D2PAK, suitable for high power density surface mounting)
Technology: SJ_Multi-EPI Super Junction Process (Fast switching, low loss, high reliability)
Drive Range: ±30V (Compatible with various gate drive schemes)
Threshold Voltage: 3.5V (Standard logic level triggers reliably)
On-Resistance: 280mΩ @ 10V (Low conduction loss, minimal heat generation)
High Current Capability: 15A (TO263 package offers significant heat dissipation advantage)
Package: TO263 (D2PAK, suitable for high power density surface mounting)
Technology: SJ_Multi-EPI Super Junction Process (Fast switching, low loss, high reliability)
Domain and module applications：
— Six High-Voltage Scenarios, One Device
Switching Power Supply: High-voltage DC-DC, AC-DC main switch, combining efficiency and stability
Charging Pile Module: Core for high-power conversion, withstands high-voltage surges, lower temperature rise
Photovoltaic Inverter: Efficient switching in MPPT circuits, helping clean energy reduce costs and increase efficiency
Industrial Motor Drive: 600V withstand voltage for bus voltage fluctuations, smooth and reliable drive
UPS Uninterruptible Power Supply: Low high-frequency switching loss, ensuring continuous power supply for critical loads
PFC Power Factor Correction: Superjunction structure optimizes conduction characteristics, improving overall system efficiency TK16G60W5
— High voltage, low resistance, rock-solid stability, making your power supply design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
