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SIHB075N65E-GE3-VB Product details
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Are you still troubled by high conduction losses and heat dissipation challenges in high-voltage and high-current applications? VBsemi SIHB075N65E-GE3-VB is here to help! This TO263-packaged N-MOSFET, utilizing SJ_Multi-EPI super-junction multi-epitaxial technology, offers a 650V high breakdown voltage with an ultra-low on-resistance of only 75mΩ, capable of handling 36A continuous current, optimizing both conduction and switching losses. Whether in switching power supplies, PFC circuits, or inverter systems, it handles them with ease, making it the 'hardcore workhorse' in high-voltage power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 36A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 650V (High voltage application, large safety margin)
Drive Range: ±30V (Compatible with various gate drive schemes)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
Ultra-Low On-Resistance: 75mΩ @ 10V (Very low conduction loss, minimal heat generation)
High Current Capability: 36A (High power output, stable and reliable)
Package: TO263 (Good heat dissipation, suitable for industrial-grade power design)
Technology: SJ_Multi-EPI Super Junction Multi-Epitaxial (Optimized conduction and switching performance)
Drive Range: ±30V (Compatible with various gate drive schemes)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
Ultra-Low On-Resistance: 75mΩ @ 10V (Very low conduction loss, minimal heat generation)
High Current Capability: 36A (High power output, stable and reliable)
Package: TO263 (Good heat dissipation, suitable for industrial-grade power design)
Technology: SJ_Multi-EPI Super Junction Multi-Epitaxial (Optimized conduction and switching performance)
Domain and module applications：
— Seven High-Voltage Scenarios, One Solution
Switching Power Supply: Efficient synchronous rectification, significantly improved conversion efficiency
PFC Power Factor Correction: Low loss, high reliability, meeting energy efficiency standards
Inverter: Photovoltaic inverter, UPS backup power, stable high-power output
Industrial Drive: Motor control, frequency converter, strong impact resistance
Charging Pile/Onboard Charger: High voltage and current tolerance, handling harsh working environments
High-Voltage DC-DC Converter: High power density, simplified thermal design
Communication Power Supply: 48V system conversion, efficient and energy-saving, long-term stable operation SIHB075N65E-GE3-VB
— High voltage, low resistance, powerful performance, making your power design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
