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SIHB21N65EF-T1-GE3-VB Product details
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Still troubled by losses and heat dissipation in high-voltage switching power supplies? Let VBsemi SIHB21N65EF-T1-GE3-VB solve your worries! This TO263-packaged N-MOSFET, using SJ_Multi-EPI superjunction technology, boasts 650V withstand voltage and 20A high current capacity, with an on-resistance of only 160mΩ, significantly reducing conduction losses in high-voltage applications. Optimized switching characteristics combined with robust thermal performance make power supply designs more efficient and reliable, making it a 'top choice' for high-voltage power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 650V (Sufficient safety margin for high-voltage systems)
Drive Range: ±30V (Compatible with standard gate drive circuits)
Threshold Voltage: 3.5V (Logic-level controllable, flexible drive design)
Ultra-Low On-Resistance: 160mΩ @ 10V (Low loss performance in high-voltage devices)
High Current Capability: 20A (Strong continuous current carrying capability)
Package: TO263 (D2PAK, suitable for power board mounting and heat dissipation)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial process, optimized conduction and switching characteristics)
Drive Range: ±30V (Compatible with standard gate drive circuits)
Threshold Voltage: 3.5V (Logic-level controllable, flexible drive design)
Ultra-Low On-Resistance: 160mΩ @ 10V (Low loss performance in high-voltage devices)
High Current Capability: 20A (Strong continuous current carrying capability)
Package: TO263 (D2PAK, suitable for power board mounting and heat dissipation)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial process, optimized conduction and switching characteristics)
Domain and module applications：
— Six Hot Scenarios, One Chip Handles All
Switching Power Supply: Efficient AC-DC main switch, reducing overall loss and temperature rise
PFC Power Factor Correction: Stable operation under high voltage and high current, improving power utilization
High-Voltage DC-DC Converter: Industrial bus, communication power supply, aiding module miniaturization and high reliability
Motor Drive: Industrial frequency conversion, white goods compressor, high voltage tolerance, strong impact resistance
Photovoltaic Inverter: MPPT boost and inverter stage, easily handling wide voltage fluctuations
Electric Vehicle Charging Pile: High power density design, ensuring stable long-term full-load output
SIHB21N65EF-T1-GE3-VB
— High-voltage superjunction, excellent efficiency, making your power design more从容!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
