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SIHB190N65E-GE3-VB Product details
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Still struggling with high switching losses and heat dissipation issues in high-voltage systems? Let VBsemi SIHB190N65E-GE3-VB solve your worries! This TO263-packaged N-MOSFET, using SJ_Multi-EPI superjunction technology, handles 650V high voltage with ease in industrial control and power supply scenarios, featuring an ultra-low on-resistance of 160mΩ and a 20A high current capacity, achieving both high-voltage conversion efficiency and reliability. Whether in switching power supplies or inverter circuits, it is a 'high-voltage weapon' in the engineer's toolkit.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 650V (High margin design, more peace of mind against surges)
Drive Range: ±30V (Compatible with 10V/12V/15V standard drives)
Threshold Voltage: 3.5V (Clear threshold, more stable switching control)
Ultra-Low On-Resistance: 160mΩ @ 10V (Low conduction loss, significantly reduced heat generation)
High Current Capability: 20A (Strong continuous current carrying capability)
Package: TO263 (Large creepage distance, excellent heat dissipation, suitable for high-voltage high-power SMD mounting)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial process, good figure of merit, superior dynamic characteristics)
Drive Range: ±30V (Compatible with 10V/12V/15V standard drives)
Threshold Voltage: 3.5V (Clear threshold, more stable switching control)
Ultra-Low On-Resistance: 160mΩ @ 10V (Low conduction loss, significantly reduced heat generation)
High Current Capability: 20A (Strong continuous current carrying capability)
Package: TO263 (Large creepage distance, excellent heat dissipation, suitable for high-voltage high-power SMD mounting)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial process, good figure of merit, superior dynamic characteristics)
Domain and module applications：
— Seven Typical Scenarios, One Chip Covers All
Switching Power Supply: LLC, flyback and other topologies, high-voltage side switch with high efficiency and low temperature rise
Charging Pile and Energy Storage: AC-DC conversion, bus pre-charge, stable and reliable
Industrial Inverter: Motor drive inverter stage, high-speed switching with low loss, impact resistant
UPS Uninterruptible Power Supply: High-voltage rectification and inversion, ensuring continuous power supply for critical loads
Photovoltaic Inverter: DC-AC boost and grid connection, aiding efficient new energy conversion
EV Onboard Charger / DC-DC: High voltage tolerance handles bus voltage fluctuations, robust and durable
High-Voltage Auxiliary Power Supply: Industrial control, communication base stations, versatile for wide voltage applications
SIHB190N65E-GE3-VB
— High voltage, high current, stable and efficient, making your power design more从容!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
