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TK14G65W5,RQ-VB Product details
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Still troubled by high losses and heat dissipation issues in high-voltage switching power supplies? Let VBsemi TK14G65W5 solve your worries! This TO263-packaged N-MOSFET, utilizing SJ_Multi-EPI superjunction technology, combines 650V withstand voltage with a 13A high current capacity, featuring an on-resistance of only 330mΩ, excelling in both switching and conduction losses. Its wide drive range and robust thermal performance make it excel in high-voltage scenarios like industrial power supplies, photovoltaic inverters, and charging stations, serving as a 'reliable workhorse' for high-voltage power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 13A | 330(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 13A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 13A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 650V (Sufficient safety margin for high-voltage systems)
Drive Range: ±30V (Compatible with common high-voltage gate drive solutions)
Threshold Voltage: 3.5V (Reliable turn-on at standard levels)
On-Resistance: 330mΩ @ 10V (Low conduction loss, controllable heat generation)
High Current Capability: 13A (Single device can handle medium power output)
Technology Platform: SJ_Multi-EPI (Superjunction process, better figure of merit)
Package: TO263 (Good heat dissipation, suitable for high-reliability industrial applications)
Drive Range: ±30V (Compatible with common high-voltage gate drive solutions)
Threshold Voltage: 3.5V (Reliable turn-on at standard levels)
On-Resistance: 330mΩ @ 10V (Low conduction loss, controllable heat generation)
High Current Capability: 13A (Single device can handle medium power output)
Technology Platform: SJ_Multi-EPI (Superjunction process, better figure of merit)
Package: TO263 (Good heat dissipation, suitable for high-reliability industrial applications)
Domain and module applications：
— Five Hot Scenarios, One Tube Handles All
Switching Power Supply: Efficient AC-DC main switch, reducing overall temperature rise
Power Factor Correction: PFC boost stage, improving power utilization
Photovoltaic Inverter: High-frequency DC-side switch, aiding clean energy conversion
Charging Pile Module: High-voltage high-power conversion, stable and reliable for long-term operation
Motor Drive Control: Industrial frequency conversion and servo systems, impact-resistant and high-voltage tolerant
TK14G65W5
— Unfazed by high voltage, unafraid of high current, making your power design more从容!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
