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2SK3812(0)-ZP-E1-AY-VB Product details

Product introduction:

2SK3812(0)-ZP-E1-AY-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching scenarios. The Trench process balances extremely low conduction loss with high switching speed, and the TO263 package achieves an excellent balance between heat dissipation capability and system reliability. The combination of 60V withstand voltage, 270A current capacity, and 2.5mΩ ultra-low on-resistance makes it an ideal power switch selection for high-power-density power conversion, motor drives, and battery protection applications, especially suitable for industrial-grade and automotive-grade scenarios with strict requirements for temperature rise and efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 3V 270A 7(mΩ) 2.5(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 3V 270A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 3V 270A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N

VDS=60V: Suitable for 12V/24V/48V systems, providing ample peak voltage margin, significantly reducing avalanche breakdown risk, enhancing system robustness.
VGS=±20V: Compatible with 4.5V~12V logic levels, can be directly connected to MCU/PMIC or gate driver IC, simplifying drive circuit design.
Vth=3V (typical): Moderate threshold voltage, ensuring both anti-interference capability and full conduction under high current conditions, suitable for multi-gate drive architectures.
RDS(on)=2.5mΩ @ VGS=10V; 7mΩ @ VGS=4.5V: Ultra-low on-resistance, minimal full-load conduction losses, significantly reducing heatsink size or copper area, increasing system power density.
ID=270A: Extremely ample continuous current margin, capable of handling startup, stall, and short-circuit transient surges of high-power loads, reducing overcurrent protection design difficulty.
Package TO263: Large-area drain heat dissipation pad, low thermal resistance, suitable for high heat generation scenarios; compatible with standard SMD mounting processes for mass production.

Domain and module applications:


High-power DC-DC converters: In synchronous rectification or buck/boost main switches, 2.5mΩ on-resistance can significantly improve heavy-load efficiency, reduce power losses, and aid module miniaturization.
Motor drives and inverters: 270A high current capability covers applications like power tools, electric two-wheelers, and low-voltage servos. Low PWM switching losses lead to smoother motor operation.
Lithium battery protection boards and BMS: Ultra-low internal resistance reduces self-heating on the protection board. 60V withstand voltage provides ample safety margin for multi-cell battery packs, supporting high-rate charge/discharge.
Automotive power and auxiliary systems: Wide safe operating area adapts to 12V/24V vehicle bus surges. The TO263 package facilitates heat dissipation, meeting high reliability requirements.
UPS and energy storage converters: Can replace multiple paralleled small-package MOSFETs in low-voltage high-current topologies, simplifying layout and reducing parasitic inductance, improving system stability.
High-frequency power switches: Trench technology combined with low gate charge supports higher switching frequencies, suitable for high-efficiency, high-density scenarios like server and communication power supplies.
Selection Summary: The 2SK3812(0)-ZP-E1-AY-VB, with its 60V withstand voltage, 270A high current, and 2.5mΩ ultra-low on-resistance as core advantages, combined with the excellent thermal performance of the TO263 package, is a high-performance general-purpose choice for low-voltage high-power switching applications, especially suitable for projects with extreme demands on efficiency, temperature rise, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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