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MTB10N40E-VB Product details
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MTB10N40E-VB is a Single N-MOS deeply optimized for high-voltage power switching applications. Using SJ_Multi-EPI (superjunction multi-layer epitaxial) technology, it achieves an excellent balance between on-resistance and switching losses. The TO263 package offers good heat dissipation capability and current handling capacity, suitable for medium- and high-power system design. The combination of 500V withstand voltage, 10A current capacity, and 380mΩ on-resistance makes it a reliable choice for scenarios such as switching power supplies, PFC, and high-voltage auxiliary power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 10A | 380(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 500V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
VDS=500V: Suitable for 220V AC rectified high-voltage bus and industrial bus systems, providing ample peak voltage margin, enhancing system surge immunity.
VGS=±30V: Wide gate drive voltage tolerance, compatible with various high-voltage driver ICs, reducing risk of gate overvoltage breakdown.
Vth=3.5V (typical): Moderate threshold voltage, strong noise immunity, suitable for high-voltage hard-switching applications, preventing false turn-on.
RDS(on)=380mΩ @ VGS=10V: Super junction structure provides low on-resistance, low conduction losses under heavy load, simplifying thermal design.
ID=10A: Continuous current capability matches medium-power loads, paired with TO263 package for efficient heat extraction, ensuring long-term reliability.
Package TO263: Large-area heat dissipation pad reduces thermal resistance, suitable for PCB mounting, balancing power density and manufacturing convenience.
Technology SJ_Multi-EPI: Multi-layer epitaxial super junction process optimizes charge balance, significantly reducing on-resistance and parasitic capacitance, improving switching efficiency.
Domain and module applications：
Switching power supplies: Strong high-voltage stress capability, suitable for flyback, forward, and half-bridge topologies, improving overall efficiency and stability.
PFC power factor correction: Low on-resistance reduces boost stage losses. High-frequency characteristics aid in the miniaturization of magnetic components.
High-voltage DC-DC converters: Sufficient operating margin under 300V~400V bus voltage, suitable for communication power supplies and industrial power modules.
LED lighting drives: Used for high-voltage constant current or linear control. High withstand voltage margin provides strong surge immunity against lightning.
Inverters and motor drives: Can be used in high-voltage auxiliary power supplies or braking circuits, reliably handling transient overvoltages.
Electric vehicle chargers: Suitable for wide voltage input. Ultra-low internal resistance reduces heat generation, improving charging efficiency and safety margin.
Industrial control auxiliary power supplies: Wide operating temperature range and TO263 heat dissipation advantages meet long-term operation requirements in harsh environments. Selection Summary: The MTB10N40E-VB achieves a good balance between high-voltage withstand capability, conduction losses, and package heat dissipation. It is a cost-effective general-purpose choice for 500V high-voltage switching applications, particularly suitable for power supply projects with strict requirements on reliability, temperature rise, and system cost.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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