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PHB225NQ04T,118-VB Product details

Product introduction:

PHB225NQ04T,118-VB is a Single N-MOSFET deeply optimized for low-voltage, high-current power switching scenarios. Utilizing the Trench process, it combines ultra-low on-resistance with excellent switching performance, while the TO263 (DPAK) package achieves an ideal balance between heat dissipation capability and soldering reliability. The combination of 40V withstand voltage, 150A current-carrying capacity, and 2mΩ-level on-resistance makes it a preferred device for high-power applications such as server power supplies, DC motor drives, and battery protection, especially suitable for industrial-grade designs requiring high current density and low thermal resistance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 3V 150A 2.5(mΩ) 2(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N

VDS=40V: Suitable for 12V/24V/36V systems, providing ample voltage margin, effectively suppressing voltage spikes, and improving system robustness.
VGS=±20V: Wide gate drive window, compatible with 5V~12V logic levels, flexible for matching PWM controllers, MCUs, or dedicated driver ICs.
Vth=3V (Typical): Moderate threshold voltage, balancing noise immunity and drive compatibility, suitable for industrial power conversion applications.
RDS(on)=2.5mΩ @ VGS=4.5V / 2mΩ @ VGS=10V: Ultra-low on-resistance, significantly reducing full-load losses and temperature rise, minimizing the need for paralleling devices and simplifying thermal design.
ID=150A: Extremely high continuous current capability, meeting high-power load startup and transient surge requirements with ample margin.
Package TO263: Large drain thermal pad, low thermal resistance, suitable for high power density PCB layouts, and compatible with standard SMT assembly processes.
Technology Trench: High cell density, low switching losses, strong avalanche ruggedness, suitable for hard-switching and high-frequency PWM applications.

Domain and module applications:


Brushless DC Motor Drives: 2mΩ-level on-resistance reduces winding drive stage heating; 150A high current supports high torque output, suitable for power tools, two-wheelers, and industrial fans.
Server/Communication Power Supplies: Replaces multiple paralleled MOSFETs in synchronous rectification applications, improving heavy-load efficiency, shrinking power module size, and reducing BOM cost.
Battery Charge/Discharge and Protection Circuits: Ultra-low internal resistance reduces protection board self-loss; transient high current carrying capacity adapts to power battery packs and energy storage systems.
Low-Voltage High-Current DC-DC Converters: Suitable for buck/boost topologies in 12V/24V bus architectures, with balanced optimization of switching and conduction losses, aiding high-density power supply design.
Automotive Electronic Auxiliary Loads: 40V withstand voltage meets 12V/24V vehicle system transient overvoltage requirements; wide temperature range and high-reliability package adapt to engine compartment environments.
Power Tools and Garden Machinery: High overload capability handles stall current surges; Trench technology ensures long-term stability under harsh conditions.
Power Load Switches: Low conduction voltage drop ensures stable load-side voltage; 150A high current supports on/off management of high-power equipment.
Selection Summary: PHB225NQ04T,118-VB, with its ultra-low on-resistance, ultra-high current capability, and TO263 robust heat dissipation package, is a cost-effective solution for 40V low-voltage high-current switching applications, particularly suitable for industrial-grade projects with strict requirements on power density, thermal dissipation, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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