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BUK764R0-40E,118-VB Product details
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You are designing a high-power-density power module, where a compact heat dissipation space must stably carry hundreds of amps of current. Traditional MOSFETs either have high conduction losses or large packages, making it difficult to balance performance and area. VBsemi BUK764R0-40E,118-VB is designed for this—it integrates a 40V withstand voltage, 150A current-carrying capability, and an ultra-low on-resistance of only 2mΩ (at 10V drive) in a TO263 (DPAK) package, making high-power conversion and compact layout no longer contradictory.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2.5(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- Voltage Rating 40V, suitable for low-voltage high-current applications with ample safety margin
- Gate Drive Range ±20V, compatible with multiple gate drive voltages, strong anti-interference capability
- Threshold Voltage 3V, clear switching characteristics, suitable for high-side/low-side drive design
- On-Resistance 2.5mΩ (4.5V drive), 2mΩ (10V drive), extremely low loss, significantly reduced temperature rise
- Maximum Current 150A, confidently handles high-power loads and surge currents
- Utilizes Trench technology, excellent figure of merit, balancing switching and conduction performance
- Gate Drive Range ±20V, compatible with multiple gate drive voltages, strong anti-interference capability
- Threshold Voltage 3V, clear switching characteristics, suitable for high-side/low-side drive design
- On-Resistance 2.5mΩ (4.5V drive), 2mΩ (10V drive), extremely low loss, significantly reduced temperature rise
- Maximum Current 150A, confidently handles high-power loads and surge currents
- Utilizes Trench technology, excellent figure of merit, balancing switching and conduction performance
Domain and module applications：
- High-Power DC-DC Converters – As synchronous rectifiers or main switches, significantly improve conversion efficiency and reduce thermal stress with extremely low on-resistance.
- Power Tools/Brushless Motor Drives – 150A high-current capability easily handles startup stall and heavy-load conditions, with TO263 package facilitating PCB heat dissipation.
- Automotive Electronics – Used in onboard power management, battery disconnect switches, etc., withstanding 40V voltage fluctuations to ensure stable system power supply.
- Server Power/Telecom Power – Achieves efficient power switching on low-voltage, high-current buses, reducing energy loss and increasing power density.
- Battery Protection Boards/Charge-Discharge Circuits – Microsecond-level turn-off capability combined with low internal resistance effectively protects battery cells from overcurrent and short-circuit damage.
- Drone/Robot Power Systems – High current margin combined with Trench technology provides robust and stable drive output for high-power motors.
- Electric Motorcycles/Low-Speed Electric Vehicles – Replaces multiple parallel MOSFETs, simplifying circuit design, improving reliability, and saving PCB area. One-sentence summary: The BUK764R0-40E,118-VB is not an ordinary MOSFET; it is the "efficiency cornerstone" and "power engine" for your medium-to-low voltage, high-current power and drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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