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BUK762R0-40E,118-VB Product details
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You are designing a high-power DC-DC converter or motor drive module, facing current demands up to 150A. Traditional MOSFETs either have excessive conduction losses or complex heat dissipation designs. VBsemi BUK762R0-40E,118-VB is designed for this—it integrates a 40V withstand voltage, 150A current-carrying capability, and an ultra-low on-resistance of only 2mΩ in a TO263 high-power package, allowing high-current power systems to maintain efficiency while still having a reliable heat dissipation path and stable switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2.5(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating 40V, suitable for low-voltage high-current applications, providing ample safety margin
Gate Drive Range ±20V, compatible with various logic level drives
Threshold Voltage 3V, clear switching characteristics, strong anti-interference capability
On-Resistance 2mΩ (at 10V drive), extremely low loss, significantly reduced heat generation
On-Resistance 2.5mΩ (at 4.5V drive), remains efficient under low-voltage drive
Maximum Current 150A, meets high power density design requirements
Trench Technology, excellent figure of merit, achieving ideal balance between switching speed and conduction loss
Package TO263, superior thermal performance, suitable for long-duration high-current operation
Gate Drive Range ±20V, compatible with various logic level drives
Threshold Voltage 3V, clear switching characteristics, strong anti-interference capability
On-Resistance 2mΩ (at 10V drive), extremely low loss, significantly reduced heat generation
On-Resistance 2.5mΩ (at 4.5V drive), remains efficient under low-voltage drive
Maximum Current 150A, meets high power density design requirements
Trench Technology, excellent figure of merit, achieving ideal balance between switching speed and conduction loss
Package TO263, superior thermal performance, suitable for long-duration high-current operation
Domain and module applications：
High-Power DC-DC Converters – As synchronous rectifiers or main switches, leveraging ultra-low on-resistance to significantly improve conversion efficiency and reduce thermal stress.
Motor Drive Modules – Suitable for high-current loads such as power tools, drones, and robots, providing stable and efficient power switching control.
Lithium Battery Protection Boards – In high-current charge/discharge scenarios, quickly cuts off overcurrent or short-circuit paths to protect battery cells while reducing its own temperature rise.
Automotive Electronics – Withstands vehicle voltage fluctuations, used in high-current paths like body control and power distribution to ensure system reliability.
Server/Telecom Power Supplies – In high-voltage-drop buck topologies like 48V to 12V, leverages low conduction loss advantages to improve overall power density.
Electric Forklift/AGV Drives – Meets high-power, high-frequency switching needs, enhancing equipment continuous operation capability and range. One-sentence summary: The BUK762R0-40E,118-VB is not an ordinary MOSFET; it is the "low-loss, high-efficiency core" and "power density champion" for your high-current power and drive designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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