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RJ1G04BBGTL1-VB Product details

Product introduction:

RJ1G04BBGTL1-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching scenarios. The Trench technology balances extremely low switching losses with high reliability, while the TO263 package provides excellent heat dissipation and high current carrying capacity. The combination of 40V withstand voltage, 150A continuous current, and 2mΩ ultra-low on-resistance makes it an ideal choice for high-power-density power conversion, motor drive, and battery protection applications, especially suitable for industrial-grade mass production solutions requiring low losses and high thermal reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 3V 150A 2.5(mΩ) 2(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
VDS=40V: Suitable for 12V/24V/36V systems, providing sufficient margin for peak voltage, reducing avalanche breakdown risk, and enhancing system robustness.
VGS=±20V: Compatible with 4.5V~12V logic levels, can directly connect to MCU/PMIC or dedicated gate drivers, simplifying peripheral circuits.
Vth=3V (Typical): Moderate threshold voltage, strong anti-interference capability, ensuring stable turn-on under 4.5V drive.
RDS(on)=2mΩ @ VGS=10V: Ultra-low on-resistance, extremely low conduction loss at full load, effectively reducing temperature rise, allowing smaller heatsink size.
RDS(on)=2.5mΩ @ VGS=4.5V: Maintains very low on-resistance under low-voltage drive, suitable for direct 5V logic drive scenarios.
ID=150A: Large continuous current margin, capable of handling high-power loads and high surge current applications, with ample reliability margin.
Trench Technology: Optimized balance between on-resistance and gate charge, fast switching speed, low switching loss, supporting high-frequency operation.
Package TO263: Low thermal resistance, short heat dissipation path, suitable for high-current long-duration operation, compatible with standard SMT process for mass production.

Domain and module applications:


DC-DC Converters: Replaces Schottky diodes in synchronous rectification; ultra-low on-resistance significantly improves heavy-load efficiency and greatly reduces module temperature rise.
Motor Drive Control: The 150A high-current capability easily drives low-voltage, high-power motors; PWM switching losses are low, ensuring high controller reliability.
Power Tools and Garden Machinery: Withstands stall and startup high-current surges; the TO263 package ensures long-term high-load operation without thermal degradation.
Battery Protection Modules: Low internal resistance reduces self-heating of the protection board; fast response ensures reliable shutdown during overcurrent/short circuit, extending battery life.
Automotive Power Systems: The 40V withstand voltage is suitable for 12V/24V automotive buses; a wide Safe Operating Area (SOA) and high surge tolerance meet stringent automotive environment requirements.
Server Power Supplies and Communication Power Supplies: Used in synchronous rectification and OR-ing circuits, significantly reducing conduction losses and improving overall power supply efficiency.
High-power LED Drivers: Low on-state voltage drop reduces power loss in constant current sources; supports high-current parallel output, enhancing overall lamp heat dissipation reliability. Selection Summary: The RJ1G04BBGTL1-VB achieves an excellent balance between ultra-low on-resistance, high current capability, and thermal performance. It is a cost-effective, general-purpose choice for 40V low-voltage, high-power switching applications, especially suitable for power supply, motor, and automotive system projects with strict requirements for efficiency, temperature rise, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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