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PSMN003-30B,118-VB Product details
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Are you designing a high-power-density power module with continuous loads of tens of amperes, where traditional MOSFETs often fall short due to excessive conduction losses and heat dissipation challenges? VBsemi PSMN003-30B,118-VB is designed precisely for this purpose. It uses a TO263 large package, perfectly combining a 30V drain-source voltage rating, a massive 150A current carrying capacity, and an ultra-low on-resistance of 2.3mΩ, allowing high-power switching applications to no longer be limited by device heating and temperature rise, easily achieving efficient and reliable power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 3.2(mΩ) | 2.3(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Drain-Source Voltage: 30V, suitable for low-voltage high-current systems
Gate Drive Range: ±20V, compatible with various logic level drives
Threshold Voltage: 1.7V, easy for low-voltage drive
On-Resistance: 2.3mΩ (at 10V drive), extremely low loss; only 3.2mΩ at 4.5V drive, excellent for low-voltage control
Maximum Current: 150A, strong overcurrent capability
Package: TO263, superior heat dissipation, ideal for high power density designs
Technology: Trench, excellent figure of merit, stable switching characteristics
Gate Drive Range: ±20V, compatible with various logic level drives
Threshold Voltage: 1.7V, easy for low-voltage drive
On-Resistance: 2.3mΩ (at 10V drive), extremely low loss; only 3.2mΩ at 4.5V drive, excellent for low-voltage control
Maximum Current: 150A, strong overcurrent capability
Package: TO263, superior heat dissipation, ideal for high power density designs
Technology: Trench, excellent figure of merit, stable switching characteristics
Domain and module applications：
High-Power DC-DC Converters – Acts as a main switching tube or synchronous rectifier, significantly reducing conduction losses and improving overall conversion efficiency.
Motor Drive Modules – Withstands high startup currents and continuous loads, ensuring smooth motor operation and reducing heat generation.
Battery Protection Boards / BMS – Quickly cuts off the circuit under abnormal conditions like overcurrent or short circuit, providing solid protection for power battery packs.
Server Power Supplies / Communication Power Supplies – Meets high current density requirements, helping power modules achieve more compact layouts.
Power Tools / Robot Controllers – Utilizes low internal resistance and high current-carrying capacity to handle frequent start/stop and impact loads.
Onboard Power Systems – Tolerates harsh voltage fluctuations, providing stable and efficient power conversion for vehicle equipment.
Inverters / UPS Backup Power Supplies – Serves as a key switch on the low-voltage, high-current side, improving system reliability and power density. One Sentence Summary: PSMN003-30B,118-VB is not just an ordinary MOS tube; it is the "power heart" and "efficiency engine" of your high-current power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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