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IPB023N03LF2SATMA1-VB Product details
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IPB023N03LF2SATMA1-VB is a Single N-MOSFET deeply optimized for low-voltage high-power switching scenarios. Its Trench technology balances ultra-low conduction losses with high switching reliability, while the TO263 package achieves an excellent balance between heat dissipation and current handling capability. The combination of 30V drain-source voltage rating, 150A current carrying capacity, and 2.3mΩ on-resistance makes it a high-performance core device for low-voltage high-current applications, particularly suitable for demanding scenarios such as power conversion, power tools, and automotive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 3.2(mΩ) | 2.3(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
VDS=30V: Suitable for 5V/12V/24V systems, provides ample margin for voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can be directly connected to MCU/PMIC, eliminating level-shifting circuits.
Vth=1.7V (typical): Can still enter the fully enhanced region under low-voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=2.3mΩ @ VGS=10V, 3.2mΩ @ VGS=4.5V: Ultra-low on-resistance, significantly reduces full-load temperature rise, can reduce heatsink volume and copper area.
ID=150A: Ample continuous current margin, meets peak and continuous current demands of high-power loads.
Package TO263: Low thermal resistance, strong current-carrying capability, suitable for high power density designs, compatible with standard SMT processes for mass production.
Domain and module applications：
Low-Voltage High-Current DC-DC Converters: Replaces Schottky diodes in synchronous rectification, significantly improving heavy-load efficiency, beneficial for module miniaturization.
Power Tool Motor Drives: Ultra-low on-resistance reduces power loss, temperature rise is controllable under high-frequency PWM switching, improving tool continuous output capability.
Onboard Auxiliary Power Supplies and Body Control: Voltage margin and wide operating range suit 12V/24V vehicle buses, reliably handling surge impacts.
Battery Protection Modules: Fast response and low internal resistance ensure microsecond-level shutdown during overcurrent/short circuits, reducing protection board self-heating.
Lithium Battery Charge and Discharge Management: 150A high-current carrying capacity meets fast charging and high-rate discharge needs, reducing system voltage drop.
Server Power Supplies and Communication Power Supplies: In low-voltage, high-current bus conversion scenarios, low loss helps overall efficiency meet high energy efficiency standards.
Industrial Low-Voltage Motor Drives: High-reliability package and low on-resistance are suitable for long-duration continuous operation, reducing maintenance costs. Selection Summary: IPB023N03LF2SATMA1-VB achieves a high balance between voltage rating, on-resistance, current capability, and package heat dissipation. It is a high-performance general-purpose choice for 30V low-voltage, high-current switching applications, especially suitable for projects with strict requirements for efficiency, temperature rise, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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