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SIHL620S-GE3-VB Product details

Product introduction:

SIHL620S-GE3-VB is a high-voltage, low-loss N-channel power MOS transistor, TO263 package, 200V withstand voltage, 9A current carrying capacity. With Trench technology, the on-resistance is as low as 400mΩ, with low switching loss and high reliability. The gate drive is flexible, with a wide ±20V range, adaptable to various industrial and power control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 200V 3V 9A 400(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 200V 3V 9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 200V 3V 9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Voltage Rating: 200V
Drive Voltage: ±20V
Turn-On Threshold: 3V
On-Resistance (10V Drive): 400 mΩ
Maximum Current: 9A
Package: TO263

Domain and module applications:


Switching Power Supplies → High-voltage DC-DC conversion, stable efficiency
Adapters and Chargers → Primary side switching, reliable withstand voltage
LED Lighting Drives → Constant current control, worry-free heat dissipation
Motor Drive and Control → High-voltage bus switching, fast response
Industrial Auxiliary Power Supplies → Wide voltage input, strong impact resistance
Inverters and UPS → High-voltage power stage, stable output
Battery Management Systems → High-side protection, decisive switching
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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