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SIHL640STRR-GE3-VB Product details

Product introduction:

SIHL640STRR-GE3-VB is a high-voltage, high-current N-channel MOS transistor, TO263 package, 200V withstand voltage, 18A current carrying capacity. With Trench technology, the on-resistance is as low as 180mΩ, with low switching loss and controllable heat generation. The gate drive is flexible, with a wide ±20V range, adaptable to various industrial and power control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 200V 3V 18A 180(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 200V 3V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 200V 3V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Voltage Rating: 200V
Drive Voltage: ±20V
Turn-On Threshold: 3V
On-Resistance (10V Drive): 180 mΩ
Maximum Current: 18A
Package: TO263
Configuration: Single N-Channel
Technology: Trench

Domain and module applications:


Switching Power Supplies → High-voltage bus conversion, stable efficiency
Industrial Power Supplies and Inverters → High withstand voltage reliability, strong overload capability
Motor Drives → High current output, fast response
Battery Charging and Discharging Management → Safe switching, reliable protection
Photovoltaic Inverters → Sufficient voltage margin, more reliable operation
On-Board Auxiliary Systems → Wide temperature operation, good impact resistance
DC-DC Converters → Synchronous rectification, lower losses
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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