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PSMN030-150B,118-VB Product details

Product introduction:

PSMN030-150B,118-VB is a high-current, low-loss N-channel MOSFET in TO263 package, with 150V withstand voltage and 45A current carrying capacity. With Trench technology, the on-resistance is as low as 35mΩ, resulting in low heat generation and high efficiency. The gate drive is flexible with ±20V wide range, suitable for various industrial and power control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 150V 3V 45A 35(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 150V 3V 45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 150V 3V 45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Voltage: 150V
Drive Voltage: ±20V
Threshold Voltage: 3V
On-Resistance (10V Drive): 35 mΩ
Max Current: 45A
Package: TO263
Technology: Trench

Domain and module applications:


Switching Power Supplies and DC-DC Converters → Synchronous rectification for better efficiency
Motor Drives and Inverter Circuits → High current throughput, stable and reliable
Battery Protection and Charging Management → Safe shutdown, extended battery life
Industrial Control and Power Tools → Impact resistant, high temperature tolerant, adaptable to harsh environments
Automotive Power Supplies and Auxiliary Power → High voltage tolerance, strong robustness, ensuring system power supply
UPS and Energy Storage Systems → Low on-resistance, reduced losses, improved overall efficiency
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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