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IPB035N10NF2SATMA1-VB Product details
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VBsemi IPB035N10NF2SATMA1-VB is a Single N-channel field effect transistor belonging to the VBsemi brand product series. This product features extremely low on-resistance and high current handling capability, suitable for high power density, high-efficiency power control and conversion applications. Manufactured using Trench technology, it has a drain-source voltage (VDS) of 100V and operates at a gate-source voltage (VGS) of ±20V. The product is packaged in TO263, suitable for industrial-grade applications requiring good heat dissipation and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | 3(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 180A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Drain-Source Voltage (VDS): 100V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 3V
On-Resistance (VGS=10V): 3 mΩ
Maximum Drain Current (ID): 180A
Technology: Trench
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 3V
On-Resistance (VGS=10V): 3 mΩ
Maximum Drain Current (ID): 180A
Technology: Trench
Domain and module applications：
1. High-Performance DC-DC Converters: The IPB035N10NF2SATMA1-VB is suitable for high-efficiency synchronous rectification DC-DC converters, its extremely low on-resistance can significantly reduce losses and improve power conversion efficiency.
2. Motor Drive Modules: This model is suitable for industrial and automotive motor drive circuits, such as power tools, electric bicycles, and low-voltage servo motor controllers, supporting high-current switching and PWM speed control.
3. Battery Management System (BMS): In lithium battery charge and discharge management circuits, this device can be used as a high-current switch for reliable battery protection and power path management.
4. Server and Communication Power Supplies: Suitable for the power stage circuits of high-power switching power supplies such as server power supplies and communication base station power supplies, meeting the needs for high reliability, high current, and efficient heat dissipation.
5. Automotive Electronic Systems: Can be used in automotive DC-DC power supplies, body control modules, and automotive-grade power distribution units, adapting to harsh working environments and ensuring long-term stable operation.
6. Power Inverters: In applications such as UPS and photovoltaic inverters, this MOSFET can serve as a high-frequency switching device, improving system power density and conversion efficiency.
7. High-Power LED Driver Power Supplies: Suitable for high-power LED lighting drive circuits, providing efficient constant current switching control, ensuring the stability and energy-saving characteristics of the lighting system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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