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NP82N10PUF-E1-AY-VB Product details

Product introduction:

NP82N10PUF-E1-AY-VB is a Single N-MOS optimized for medium-voltage, high-current power switching scenarios. The Trench process balances low conduction losses and high switching speed, while the TO263 package offers excellent heat dissipation and reliable solder stress tolerance. The combination of 100V withstand voltage, 100A current capability, and 10mΩ on-resistance makes it a preferred power device for motor drives, power conversion, and automotive systems, especially suitable for applications with strict requirements for thermal reliability and high current margins.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 100V 2.5V 100A 23(mΩ) 10(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 100V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 100V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N

VDS=100V: Adapts to 24V/36V/48V/60V systems, covers wide voltage buses, provides ample margin for voltage spikes, significantly reducing avalanche breakdown risk.
VGS=±20V: Compatible with 5V~12V logic levels, can directly connect to MCU/drivers, simplifying gate drive circuit design.
Vth=2.5V (Typical): Moderate threshold, balancing noise immunity and drive compatibility, suitable for industrial PWM control.
RDS(on)=10mΩ @ VGS=10V: Ultra-low on-resistance, extremely low conduction losses at high current full load, effectively reducing power stage temperature rise.
RDS(on)=23mΩ @ VGS=4.5V: Maintains good conduction capability under low voltage drive, providing redundancy design margin for voltage-constrained scenarios.
ID=100A: Ample continuous current capability, capable of handling heavy load peak demands of high-power motors, battery circuits, and DC-DC converters.
Package TO263: Large heat sink area design, low thermal resistance, supports high power density layout, suitable for long-term high current operation.

Domain and module applications:


High-power motor drive: Low on-resistance and high current-carrying capacity improve driver efficiency, low PWM switching loss ensures smoother motor operation, and controller temperature rise is significantly reduced.
Power tools and garden machinery: Withstands high inrush current, 10mΩ internal resistance reduces battery heat loss, extends single-charge working time, and enhances system durability.
Vehicle power supply system: 100V withstand voltage adapts to 12V/24V/48V vehicle bus, wide safe operating area ensures reliability under transient conditions such as alternator load dump.
DC-DC converters and synchronous rectification: Replaces traditional fast recovery diodes, improving heavy-load efficiency by 2~3%, low switching loss facilitates higher switching frequency and smaller magnetic components.
Lithium battery protection and BMS circuit: Ultra-low on-resistance reduces protection board self-heating, high current discharge capability matches high-capacity battery packs, meeting the needs of electric two-wheelers and energy storage equipment.
UPS and industrial power supplies: TO263 package provides sufficient heat dissipation, high reliability for continuous operation, suitable for high-frequency inverters and power factor correction circuits.
High-power LED lighting drive: Low on-state voltage drop reduces constant current source power loss, supports multiple parallel connections, improving overall efficiency and luminous stability. Selection Summary: The NP82N10PUF-E1-AY-VB achieves an excellent balance between voltage margin, current-carrying capacity, on-resistance, and package heat dissipation. It is a cost-effective general-purpose choice for 100V-level high-current switching applications, especially suitable for industrial-grade and automotive-grade projects with strict requirements for power density, thermal management, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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