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SIHFL014TR-GE3-VB Product details
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Are you designing a compact power module or battery management circuit that needs to withstand 60V voltage stress while achieving efficient switching within a limited PCB area? Ordinary MOSFETs either lack sufficient withstand voltage or have high conduction losses. VBsemi SIHFL014TR-GE3-VB is designed for such needs—it uses an SOT223 package, combining 60V withstand voltage, 4.5A continuous drain current, and a low on-resistance of 76mΩ, providing a switching solution that balances reliability and thermal performance for small to medium power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 85(mΩ) | 76(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
- Drain-Source Voltage: 60V, covering common bus voltages up to 48V with sufficient safety margin
- Gate-Source Voltage Range: ±20V, compatible with 4.5V~10V logic levels for more flexible drive design
- Threshold Voltage: 1.7V, suitable for direct drive by low-voltage control signals
- On-Resistance: 85mΩ (at 4.5V drive), 76mΩ (at 10V drive), effectively reducing conduction losses
- Maximum Drain Current: 4.5A, meeting medium and low-power switching and load control requirements
- Technology: Trench process, offering excellent switching characteristics and stable thermal performance
- Gate-Source Voltage Range: ±20V, compatible with 4.5V~10V logic levels for more flexible drive design
- Threshold Voltage: 1.7V, suitable for direct drive by low-voltage control signals
- On-Resistance: 85mΩ (at 4.5V drive), 76mΩ (at 10V drive), effectively reducing conduction losses
- Maximum Drain Current: 4.5A, meeting medium and low-power switching and load control requirements
- Technology: Trench process, offering excellent switching characteristics and stable thermal performance
Domain and module applications：
- DC-DC Step-Down/Step-Up Modules – Used as synchronous rectifier or main switch, improving conversion efficiency and reducing heat generation.
- Motor Drive Circuits – Used for on-off control of small DC motors, fans, or pumps, supporting PWM speed regulation.
- Battery Protection Boards – Quickly cuts off the circuit during overcurrent or short circuit, protecting cells and downstream circuits.
- LED Lighting and Ambient Light Drivers – Stably controls current on-off, achieving smooth dimming and low ripple.
- Industrial Sensor/Instrument Power Supplies – Adapts to 24V~48V power supply environments, providing reliable power rail switching.
- Smart Home and IoT Devices – Flexibly switches between low-power standby and high-load transients, balancing energy efficiency and stability.**One-sentence summary: SIHFL014TR-GE3-VB is not an ordinary MOS tube; it is the 'balance master' in your medium-voltage power and load management – finding the perfect combination of voltage withstand, current, and conduction loss.**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
