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2SJ632-TD-E-VB Product details
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VBsemi 2SJ632-TD-E-VB is a Single P-channel field-effect transistor, belonging to the VBsemi brand product series. This product has high performance and stability, suitable for various power control and regulation applications. Manufactured with Trench technology, it has a drain-source voltage (VDS) of -60V and operates at a gate-source voltage (VGS) of ±20V. The product is packaged in SOT89, suitable for application environments requiring efficient and compact design, and has low on-resistance and good current handling capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -60V | -1.7V | -6.5A | 65(mΩ) | 58(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -60V | -1.7V | -6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -60V | -1.7V | -6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P |
Drain-Source Voltage (VDS): -60V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): -1.7V
On-Resistance (VGS=4.5V): 65mΩ
On-Resistance (VGS=10V): 58mΩ
Maximum Drain Current (ID): -6.5A
Package Type: SOT89
Technology: Trench
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): -1.7V
On-Resistance (VGS=4.5V): 65mΩ
On-Resistance (VGS=10V): 58mΩ
Maximum Drain Current (ID): -6.5A
Package Type: SOT89
Technology: Trench
Domain and module applications：
1. Power Management Module: 2SJ632-TD-E-VB is suitable for negative power rail switching control and power conversion circuits, such as load switches and reverse polarity protection circuits in DC-DC converters, providing low-loss, high-efficiency power management solutions.
2. Battery Protection Circuit: In battery charge/discharge management systems, this P-channel MOSFET can be used as a high-side switch to effectively control current in charging and discharging loops, ensuring safe operation and extending battery pack lifespan.
3. Load Switch Circuit: Suitable for load switch modules requiring negative voltage or high-side switch control, such as power on/off control in portable devices and industrial control boards, featuring low on-resistance and fast switching characteristics.
4. Motor Drive Module: Can be used in low-voltage drive circuits for small DC motors, fan motors, etc., enabling motor start/stop and speed control, particularly suitable for power tools and home appliances requiring low power consumption and compact packaging.
5. Automotive Electronic Auxiliary Systems: In vehicle electronic systems, this device can be used for auxiliary power management and load control, such as headlight control and sensor power supply switching, meeting stable and reliable operational requirements.
6. LED Lighting Drive: Suitable for switching control or PWM dimming circuits in LED lighting equipment, enabling efficient current switching to enhance lighting system stability and energy-saving effects.
7. Industrial Control and Automation: In PLCs, sensor interfaces, and industrial control modules, this MOSFET can serve as a signal switching or power management component, adapting to harsh industrial environments and ensuring long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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