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2SJ670-TD-E-VB Product details
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2SJ670-TD-E-VB is a Single P-MOS optimized for medium to high voltage power switching scenarios. The Trench process achieves a good balance between low switching loss and high reliability heat dissipation, while the SOT89 package offers superior heat dissipation capability and compact footprint. With a -100V withstand voltage, -3A current carrying capacity, and 200mΩ on-resistance combination, it is an ideal choice for 48V/72V negative power systems and high-side load switches, especially suitable for applications with volume and power density requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -100V | -2V | -3A | 230(mΩ) | 200(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -100V | -2V | -3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -100V | -2V | -3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P |
VDS=-100V: Covers 48V/72V system bus voltages, providing ample margin for reverse voltage spikes, enhancing system avalanche capability.
VGS=±20V: Wide gate drive range, compatible with common PWM controllers and logic levels, reducing gate overvoltage risk.
Vth=-2V (typical): Moderate threshold voltage, enabling stable and controllable turn-on and turn-off under -4.5V to -10V drive conditions.
RDS(on)=200mΩ @ VGS=-10V: Good conduction loss control, acceptable heat generation at full load, suitable for level shifting and load switch applications.
RDS(on)=230mΩ @ VGS=-4.5V: Usable current capability even under low-voltage drive, supporting direct drive from 4.5V logic levels.
ID=-3A: Continuous current capability meets most medium and low-voltage auxiliary load and signal-level switching requirements.
Package SOT89: Compact size, low thermal resistance, compatible with high-density assembly, while facilitating PCB layout and heat dissipation.
VGS=±20V: Wide gate drive range, compatible with common PWM controllers and logic levels, reducing gate overvoltage risk.
Vth=-2V (typical): Moderate threshold voltage, enabling stable and controllable turn-on and turn-off under -4.5V to -10V drive conditions.
RDS(on)=200mΩ @ VGS=-10V: Good conduction loss control, acceptable heat generation at full load, suitable for level shifting and load switch applications.
RDS(on)=230mΩ @ VGS=-4.5V: Usable current capability even under low-voltage drive, supporting direct drive from 4.5V logic levels.
ID=-3A: Continuous current capability meets most medium and low-voltage auxiliary load and signal-level switching requirements.
Package SOT89: Compact size, low thermal resistance, compatible with high-density assembly, while facilitating PCB layout and heat dissipation.
Domain and module applications：
High-Side Load Switch: The P-MOS negative voltage architecture facilitates control of the upper rail switch, with simple gate drive and the drain directly connectable to the load.
Reverse Polarity Protection: Utilizes the low conduction loss of P-MOS to achieve low voltage drop reverse polarity protection in negative voltage buses, improving system safety.
DC-DC Converter Auxiliary Power Supply: Adapts to -100V class input voltage for startup circuits or auxiliary voltage regulation, with a wide gate voltage range simplifying drive design.
Lithium Battery/Energy Storage System Protection: Controls the negative voltage side of multi-cell battery packs, with fast switching characteristics effectively responding to overcurrent and short-circuit faults.
Motor Drive and Solenoid Valve Control: The P-MOS high-side switch paired with an N-MOS low-side switch forms a half-bridge, suitable for industrial control and automation equipment.
LED Lighting Power Supply: Used as a power edge switch in constant current sources or dimming circuits, with low conduction voltage drop improving overall efficiency.
Vehicle Electronics and Communication Equipment: The voltage margin and SOT89 package adapt to a wide temperature range and compact structural requirements, offering high reliability. Selection Summary: The 2SJ670-TD-E-VB achieves a balance between -100V voltage withstand, -3A current, and SOT89 package, providing a cost-effective choice that balances performance and space for negative voltage load switches and power management, especially suitable for projects with clear requirements for voltage margin and board area.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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