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2SK2167-TD-E-VB Product details

Product introduction:

**Product Introduction** 2SK2167-TD-E-VB is a high-voltage, low-current N-channel MOS transistor in a SOT89 package, with 250V withstand voltage and 0.3A current capability. With Trench technology, it offers stable on-resistance and low switching losses, suitable for high-voltage auxiliary circuits and driver modules. The gate drive is flexible with a wide range of ±20V, compatible with various control signals.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT89 Single-N 250V 3V 0.3A 1500(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT89 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT89 Single-N 250V 3V 0.3A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT89 Single-N 250V 3V 0.3A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT89 Single-N
Voltage Rating: 250V
Drive Voltage: ±20V
Threshold Voltage: 3V
On-Resistance (10V Drive): 1500mΩ
Maximum Current: 0.3A
Package: SOT89
Technology: Trench

Domain and module applications:


High-Voltage Auxiliary Power Supply → Stable, reliable, large voltage margin
Switching Power Supply Startup Circuit → Fast response, low power consumption
AC-DC Secondary Feedback → Signal isolation, precise switching
LED Lighting High-Voltage Driver → Constant current control, low temperature rise
Industrial Control Signal Switch → High withstand voltage, strong anti-interference
Charger High-Voltage Side Detection → Low current sampling, accurate and reliable
Low-Power Inverter Drive → High-voltage handling, safe and durable
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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