RBE015N10R1SZPW#KB0-VB Product details
Product introduction:
VBsemi RBE015N10R1SZPW#KB0-VB is a Single N-Channel MOSFET, part of the VBsemi brand high-performance power MOSFET series. This product is manufactured using advanced SGT (Split Gate Trench) technology, featuring extremely low on-resistance and excellent current handling capability, suitable for high-power power conversion and high-current switching applications. The device uses a TOLT-16 package, balancing heat dissipation performance with compact installation size, providing a reliable solution for high-density power supply design.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | 1.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N |
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 3V
- On-Resistance (VGS=10V): 1.2 mΩ
- Maximum Drain Current (ID): 415A
- Technology: SGT (Split Gate Trench)
Domain and module applications:
:
1. High-Power DC-DC Converters: RBE015N10R1SZPW#KB0-VB is suitable for high-efficiency, high-power-density DC-DC converters, used as synchronous rectifiers or main switches, significantly reducing conduction losses and improving system efficiency.
2. Electric Vehicle Power Systems: In battery management systems (BMS) and motor drive inverters of electric and hybrid vehicles, this device can withstand high current surges, suitable for key applications such as battery charge/discharge control and main circuit switching.
3. Server and Telecom Power Supplies: This model is applicable to high-power-density scenarios like data center server power supplies and telecom base station rectifier modules. Its low on-resistance and TOLT-16 package help optimize thermal management and improve long-term reliability.
4. Industrial Motor Drives and Inverters: In industrial inverters, servo drives, and high-power motor control modules, it can be used as a power switch for inverter bridge arms, supporting high-frequency switching and overcurrent protection to meet demanding industrial operating environments.
5. Energy Storage Systems and UPS: Used in power conversion units of Uninterruptible Power Supplies (UPS) and Power Conversion Systems (PCS), enabling high-current bidirectional conduction, improving system power density and dynamic response.
6. Automotive Electronics Auxiliary Systems: In on-board DC-DC auxiliary power supplies, electronically controlled steering, and braking energy recovery systems, this MOSFET provides stable high-current switching performance, ensuring reliable operation under harsh temperature conditions.
7. High-Power Load Switches and Power Distribution Modules: Suitable for high-side/low-side load switches in industrial equipment, power tools, and battery pack protection circuits. With its 415A ultra-high current capability and 1.2mΩ extremely low on-resistance, it effectively reduces system losses and temperature rise.
Technical support:
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