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RBA015N10R1SBPW#KB0-VB Product details
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Product Description:
VBsemi RBA015N10R1SBPW#KB0-VB is a Single N-Channel MOSFET, belonging to the VBsemi brand product series. This product is manufactured using advanced SGT (Shielded Gate Trench) technology, featuring ultra-low on-resistance and high current handling capability, suitable for high-power, high-efficiency power conversion and control applications. The device has a drain-source voltage (VDS) of 100V, supports a gate-source voltage (VGS) of ±20V, and comes in a TOLT-16 package, ideal for high-density power circuit design.
VBsemi RBA015N10R1SBPW#KB0-VB is a Single N-Channel MOSFET, belonging to the VBsemi brand product series. This product is manufactured using advanced SGT (Shielded Gate Trench) technology, featuring ultra-low on-resistance and high current handling capability, suitable for high-power, high-efficiency power conversion and control applications. The device has a drain-source voltage (VDS) of 100V, supports a gate-source voltage (VGS) of ±20V, and comes in a TOLT-16 package, ideal for high-density power circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | 1.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N |
Drain-Source Voltage (VDS): 100V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 3V
On-Resistance (VGS=10V): 1.2 mΩ
Maximum Drain Current (ID): 415A
Package: TOLT-16
Technology: SGT
Domain and module applications：
1. High-Power DC-DC Converters: RBA015N10R1SBPW#KB0-VB is suitable for high-power DC-DC conversion modules like server power supplies and telecom power supplies, significantly reducing conduction losses and improving conversion efficiency.
2. Motor Drive Modules: This device can be used in industrial motor drives, power tools, drone brushless motor controllers, etc. With its 415A ultra-high current capability and low on-resistance, it ensures smooth and efficient motor operation.
3. Battery Protection and Management Systems: In energy storage devices and electric vehicle battery management systems, this device can serve as a high-side or low-side switch for high-current charge/discharge control, ensuring battery safety and extending lifespan.
4. Inverters and UPS Power Supplies: Suitable for the power conversion stage of photovoltaic inverters and Uninterruptible Power Supplies (UPS). Its 100V withstand voltage and extremely low on-resistance help reduce heat dissipation requirements and improve system power density.
5. Automotive Electronics Systems: In applications like on-board power conversion, body control modules, and electric power steering, this device provides reliable switching performance, meeting the high reliability and high current requirements of automotive electronics.
6. High-Power Load Switches: Can be used in scenarios like industrial equipment, electric forklifts, and smart grid terminals as a switching control element for high-power loads, offering advantages of low heat generation and high durability.
7. Synchronous Rectification Circuits: In high-efficiency power topologies like LLC and full-bridge, this device can be used as a synchronous rectification MOSFET, reducing rectification losses and meeting the design requirements of high-power-density power modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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