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NVBYST0D8N08XTXG-VB Product details
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NVBYST0D8N08XTXG-VB is a Single N-MOS deeply optimized for high-power low-voltage switching scenarios, using advanced SGT (Split Gate Trench) technology to achieve an excellent balance between ultra-low on-resistance and fast switching characteristics. The TOLT-16 package offers excellent heat dissipation capability and low parasitic inductance, suitable for high current density applications. The combination of 100V withstand voltage, 415A continuous current, and 1.2mΩ on-resistance makes it a high-performance core power device for heavy-load scenarios such as server power supplies, automotive electrical systems, and industrial power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | 1.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N |
VDS=100V: Suitable for 48V/72V/96V systems and 12V/24V multi-stage boost topologies, providing ample voltage spike margin, significantly reducing avalanche breakdown risk.
VGS=±20V: Compatible with 5V~12V drive levels, can be directly connected to dedicated gate drivers or PWM controllers, supporting flexible gate voltage design.
Vth=3V (Typical): Moderate threshold voltage effectively suppresses dv/dt-induced false turn-on while ensuring full conduction under 10V drive, suitable for industrial-grade reliable driving.
RDS(on)=1.2mΩ @ VGS=10V: Extremely low on-resistance, significantly reduces conduction losses compared to traditional package devices at the same current, can notably reduce heatsink size and improve system efficiency.
ID=415A: Excellent continuous current carrying capability, can confidently handle peak load demands of high-power motors, battery storage, and power supply modules with ample margin.
TOLT-16 Package: Top-side cooling structure combined with large source connection area provides low thermal resistance and good current sharing, while low parasitic inductance supports high-frequency hard switching and parallel current expansion design.
SGT Technology: Shielded gate structure reduces Miller capacitance, further optimizing switching losses, more suitable for high-frequency, high-di/dt operating conditions.
Domain and module applications：
Server and Telecom Power Supplies: Ultra-low on-resistance significantly improves synchronous rectification stage efficiency; TOLT-16 package facilitates high-power-density module design.
High-Voltage Battery Energy Storage Systems: 100V withstand voltage covers battery pack charge/discharge peak fluctuations; 415A high current supports charge/discharge switching and protection circuits for large-capacity packs.
Electric Vehicle Auxiliary Systems: Meets 48V vehicle bus and DCDC converter requirements; low losses improve range; wide Safe Operating Area enhances reliability.
Industrial Motor Drives: 1.2mΩ internal resistance reduces power stage heat generation; SGT technology optimizes PWM switching dynamics, suitable for inverters, servo drives, and high-power brushless motor controllers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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