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IPTG039N15NM5ATMA1-VB Product details
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VBsemi IPTG039N15NM5ATMA1-VB is a Single N-channel field-effect transistor belonging to the VBsemi brand product series. This product is manufactured using advanced SGT (Split Gate Trench) technology, featuring extremely low on-resistance and high current carrying capability, suitable for high-performance power conversion and high power density application scenarios. The device has a drain-source voltage (VDS) of 150V, supports a gate-source voltage (VGS) of ±20V, and is packaged in TOLL, making it suitable for power system designs requiring high current, low losses, and good heat dissipation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TOLL | Single-N | 150V | 3.5V | 170A | 5(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TOLL | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TOLL | Single-N | 150V | 3.5V | 170A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TOLL | Single-N | 150V | 3.5V | 170A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TOLL | Single-N |
- Drain-Source Voltage (VDS): 150V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 5 mΩ
- Maximum Drain Current (ID): 170A
- Package Type: TOLL
- Technology Type: SGT (Split Gate Trench)
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 5 mΩ
- Maximum Drain Current (ID): 170A
- Package Type: TOLL
- Technology Type: SGT (Split Gate Trench)
Domain and module applications：
1. High-Power DC-DC Converters: IPTG039N15NM5ATMA1-VB is suitable for high-efficiency, high-power-density DC-DC converters, especially in synchronous rectification and switching circuits, significantly reducing conduction losses and improving overall conversion efficiency.
2. Electric Vehicle and Power Tool Motor Drives: With a 150V withstand voltage and 170A high current capability, this device can be used in motor drive modules for electric bicycles, electric motorcycles, and high-power power tools, enabling smooth motor start/stop and speed control.
3. Server and Telecom Power Supplies: In systems requiring high reliability and efficiency, such as server power supplies and telecom base station power supplies, this MOSFET can serve as a power switch for PFC (Power Factor Correction) or DC-DC stages, ensuring stable system operation.
4. Energy Storage and Battery Protection Systems: Suitable for charge/discharge control in energy storage inverters, lithium battery protection boards, and BMS (Battery Management Systems). Its low on-resistance and high current capability effectively reduce temperature rise and extend system life.
5. Industrial Motor Drives and Frequency Converters: In applications like industrial frequency converters and servo drives, this device can be used in inverter bridge circuits, supporting high-frequency switching and high current output to meet the demands of high-load and harsh environments.
6. Automotive Electronic Auxiliary Systems: For applications such as on-board power supplies, DC-DC auxiliary power supplies, and automotive lighting drivers, this model provides stable and reliable power switching over a wide temperature range, suitable for automotive-grade power module design.
7. High-Performance Power Module Integration: Benefiting from the low parasitic inductance and excellent thermal characteristics of the TOLL package, this product is suitable for high-density design solutions like power modules and power integration units, supporting system miniaturization and efficiency improvement.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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