RBE039N15R1SZPW#KB0-VB Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TOLL | Single-N | 150V | 3.3V | 240A | 2.8(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TOLL | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TOLL | Single-N | 150V | 3.3V | 240A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TOLL | Single-N | 150V | 3.3V | 240A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TOLL | Single-N |
- Gate drive range ±20V, compatible with various drive circuits, stronger anti-interference capability
- Threshold voltage 3.3V, clear switching characteristics, effectively preventing false turn-on
- On-resistance 2.8mΩ (at 10V drive), maintaining extremely low loss even at high currents
- Maximum current 240A, enabling high power density topology design
- Utilizes SGT technology for superior switching speed and body diode recovery characteristics
Domain and module applications:
- Server/Telecom Power Supplies – As a synchronous rectifier or primary-side switch, significantly reduces conduction losses, improving overall system efficiency.
- Power Tools/Garden Machinery – Handles high current surges during stall conditions; RBE039N15R1SZPW#KB0-VB provides stable output, extending tool life.
- Automotive DC-DC Converters – 150V withstand voltage covers 12V/24V/48V systems; low on-resistance reduces heat generation, suitable for compact body controllers.
- Energy Storage Inverters – Acts as a power switch in MPPT or inverter bridge arms, achieving high-efficiency power conversion.
- Battery Formation/Aging Equipment – Precisely controls charge/discharge current; 240A high current capability simplifies parallel design, reducing equipment size.
- Motor Drive Modules – Low on-resistance reduces MOSFET temperature rise, decreases heatsink volume, and improves power density.
- High-Power Charging Pile Modules – Withstands multi-channel parallel output with extremely low losses, providing a reliable core component for new energy charging infrastructure.**One-Sentence Summary:** RBE039N15R1SZPW#KB0-VB is not an ordinary MOSFET; it is the "efficiency cornerstone" and "power core" of your high-voltage, high-current power system.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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