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IPT023N10NM5LF2ATMA1-VB Product details
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VBsemi IPT023N10NM5LF2ATMA1-VB is a Single N-channel field effect transistor, belonging to the VBsemi brand product series. This product features ultra-low on-resistance and high current carrying capacity, suitable for high-power power conversion and high-density power management applications. Manufactured using advanced SGT (Shielded Gate Trench) technology, it has a drain-source voltage (VDS) of 100V and operates at a gate-source voltage (VGS) of ±20V. The product is packaged in TOLL (TO-Leadless) leadless package, suitable for industrial-grade applications requiring efficient heat dissipation and compact design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TOLL | Single-N | 100V | 3V | 200A | 2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TOLL | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TOLL | Single-N | 100V | 3V | 200A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TOLL | Single-N | 100V | 3V | 200A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TOLL | Single-N |
- Drain-Source Voltage (VDS): 100V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 3V
- On-Resistance (VGS=10V): 2 mΩ
- Maximum Drain Current (ID): 200A
- Package: TOLL
- Technology: SGT
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 3V
- On-Resistance (VGS=10V): 2 mΩ
- Maximum Drain Current (ID): 200A
- Package: TOLL
- Technology: SGT
Domain and module applications：
1. High-power DC-DC Converters: IPT023N10NM5LF2ATMA1-VB is suitable for high-efficiency synchronous rectification and switching circuits, significantly reducing conduction losses and improving overall efficiency in high-power-density conversion modules such as server power supplies and communication power supplies.
2. Electric Vehicles and Battery Management: This device can serve as a battery charge/discharge control switch, applied in battery protection modules for power tools, electric two-wheelers, and energy storage systems. Its 200A high current capability and extremely low on-resistance effectively reduce heat generation, ensuring system safety and reliability.
3. Motor Drive and Control: In low-voltage, high-power motor drive modules (e.g., drones, robots, electric forklifts), this MOSFET can be used in H-bridge or three-phase inverter circuits, enabling precise motor start/stop and speed regulation.
4. Automotive Electronic Systems: Suitable for 12V/48V electrical systems such as vehicle DC-DC, automotive lighting drives, and auxiliary power supplies. Its 100V withstand voltage and TOLL package offer good heat dissipation and impact resistance, meeting automotive-grade reliability requirements.
5. High-end Power Adapters and Fast Charging: In USB PD fast chargers and laptop adapters above 100W, it can serve as the main switch or synchronous rectifier tube. Leveraging the advantages of SGT technology, it achieves high-frequency, high-efficiency operation, reducing transformer size and increasing power density.
6. Industrial Power Supplies and UPS: In the power conversion stage of industrial switching power supplies and uninterruptible power supplies (UPS), this device can handle high currents while maintaining an extremely low conduction voltage drop, effectively improving system overload capacity and long-term operational stability.
7. Power Tools and Garden Machinery: For high-power brushless motor-driven power tools (e.g., drills, saws, blowers), this MOSFET provides strong current output and low heat generation characteristics, extending tool runtime and lifespan.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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