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SISS32LDN-T1-BE3-VB Product details

Product introduction:

VBsemi SISS32LDN-T1-BE3-VB is a Single N-channel field-effect transistor, belonging to the VBsemi brand high-performance power device series. This product is manufactured using advanced SGT (Split Gate Trench) technology, featuring extremely low on-resistance, excellent current handling capability, and good thermal stability, suitable for medium-to-high voltage power conversion and power management applications. Its drain-source voltage (VDS) is 80V, gate-source voltage (VGS) is rated at ±20V, and the typical threshold voltage (Vth) is 3V. The product adopts a DFN8 (3X3) small package, balancing efficient heat dissipation and compact layout needs, suitable for high-density circuit designs.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 80V 3V 56A 11.5(mΩ) 7.5(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 80V 3V 56A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 80V 3V 56A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
- Drain-Source Voltage (VDS): 80V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 3V
- On-Resistance (VGS=4.5V): 11.5 mΩ
- On-Resistance (VGS=10V): 7.5 mΩ
- Maximum Drain Current (ID): 56A
- Technology: SGT (Split Gate Trench)
- Package: DFN8 (3X3)

Domain and module applications:


1. High-Efficiency DC-DC Converters: SISS32LDN-T1-BE3-VB is suitable for synchronous rectification and switching circuits. With its ultra-low 7.5mΩ on-resistance and 56A high current capability, it significantly improves conversion efficiency and reduces power loss.
2. Motor Drive Modules: This device can be used for medium voltage motor control, such as power tools, fan drives, and pump controllers, enabling motor start/stop, speed control, and reverse control, with high reliability and fast switching characteristics.
3. Power Adapters and Chargers: In applications like laptop adapters and fast chargers, as the main switch or rectifier, it can effectively reduce temperature rise and improve overall power density.
4. Battery Protection and Management Systems: Suitable for charge/discharge protection circuits of battery packs up to 48V, as a high-current switching element, ensuring safe operation and extending battery pack life.
5. Communication and Server Power Supplies: In applications requiring high stability and efficiency like server and base station power supplies, this MOSFET can be used for Power Factor Correction (PFC) or DC-DC stages, meeting stringent industrial application requirements.
6. Automotive Electronic Systems: Used in automotive DC-DC converters, LED headlight drivers, and body control modules, providing stable and reliable power switching performance over a wide temperature range.
7. Industrial Control and Automation: As a power interface device in PLCs, frequency converters, and industrial sensors, achieving signal isolation and power amplification, adapting to complex industrial environments. VBsemi SISS32LDN-T1-BE3-VB, with its SGT technology enabling low conduction loss, high current density, and compact DFN8 (3X3) package, is an ideal choice for medium-to-high voltage power and motor control fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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