Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6)-B |
Dual-N+N |
40V |
|
3V |
90A |
|
3.3(mΩ) |
2.2(mΩ) |
SGT |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6)-B |
Dual-N+N |
|
|
|
|
|
SGT |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6)-B |
Dual-N+N |
40V |
|
3V |
90A |
|
SGT |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6)-B |
Dual-N+N |
40V |
|
3V |
90A |
|
SGT |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6)-B |
Dual-N+N |
|
|
|
|
|
|
|
- Drain-Source Voltage (VDS): 40V, suitable for low-voltage, high-current scenarios, providing ample safety margin
- Gate-Source Voltage (VGS): ±20V, compatible with various gate drive voltages
- Threshold Voltage (Vth): 3V, clear switching characteristics, easy drive design
- On-Resistance (RDS(on)): 2.2mΩ (at 10V drive) / 3.3mΩ (at 4.5V drive), negligible power loss
- Maximum Drain Current (ID): 90A, dual N+N parallel configuration, robust current handling capability
- Technology: SGT (Split Gate Trench), excellent figure of merit (FOM), optimal switching and conduction performance
Domain and module applications：
- High-power DC-DC Converters – Used as synchronous rectifiers or step-down main switches, with 2.2mΩ ultra-low on-resistance, significantly reducing conduction losses and improving conversion efficiency.
- Motor Drive Modules – Dual N+N channel design suits H-bridge or half-bridge topologies; 90A high-current output capability meets high-power load requirements for power tools, robots, etc.
- Lithium Battery Protection Boards / BMS – Quickly shut off during overcurrent or short circuits; low internal resistance reduces heat accumulation, ensuring cell safety and system stability.
- Server Power Supplies / Telecom Power Supplies – DFN8(5X6) miniaturized packaging combined with SGT technology enables efficient thermal management on high-power-density boards, improving system reliability.
- Automotive 12V/48V Electrical Systems – Withstand 40V voltage spikes, suitable for automotive DC-DC converters, LED drivers, and auxiliary power modules, stably handling complex automotive environments.
- Power OR-ing Circuits – Dual-channel independent control, low conduction voltage drop reduces power path loss, suitable for redundant power systems.**One-sentence summary: The IAUCN04S7L038DATMA1-VB is not an ordinary dual N-channel MOS tube; it is the "low-resistance weapon" and "power density champion" of your high-current, high-efficiency power supply design.**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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