Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
80V |
|
3.5V |
140A |
|
|
2.65(mΩ) |
SGT |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
SGT |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
80V |
|
3.5V |
140A |
|
SGT |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
80V |
|
3.5V |
140A |
|
SGT |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Voltage Rating 80V, covers 48V systems and multi-cell battery applications, providing sufficient safety margin
Gate Drive Range ±20V, compatible with various drive voltages and gate protection requirements
Threshold Voltage 3.5V, reliable turn-on with standard level drive, strong anti-interference capability
On-Resistance 2.65mΩ (at 10V drive), extremely low conduction loss, significantly improves system efficiency
Maximum Current 140A, small package delivers high power, suitable for high power density scenarios
Uses SGT (Shielded Gate Trench) technology, balancing switching speed and conduction performance
Domain and module applications:
Server/Data center power supplies – Used as synchronous rectifiers or power switches, effectively reducing conduction loss, improving power conversion efficiency, and reducing overall system size.
Telecom base station power modules – Maintain stable output over a wide input voltage range, withstand high surge currents, ensuring continuous operation of critical equipment.
Power tools / Garden machinery – Leverage 140A high current capability and low on-resistance to drive high-torque brushless motors, extending battery life.
Automotive DC-DC converters – Meet the 80V voltage rating requirements of 48V mild hybrid systems and commercial vehicle electrical architectures, achieving efficient voltage conversion.
Lithium battery storage / Charging stations – Handle high current switching in charge/discharge circuits, with microsecond-level response to protect cell safety and reduce system temperature rise.
High-power DC-DC step-down modules – Replace high conduction loss Schottky diodes in synchronous rectification topologies, improving conversion efficiency by 2~5%.
Motor drive inverters – Utilize the fast switching characteristics of SGT technology to improve PWM control accuracy and reduce switching ringing. One-sentence summary: The SIR584DP-T1-BE3-VB is not an ordinary power MOS tube; it is the 'low-loss ace' and 'space saver' for your 80V-class high-power, high-density power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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