Featured Model

Your present location > Home page > Featured Model

RBE035N04R0SZN6#HB0-VB Product details

Product introduction:

Are you designing a high-power-density power module but facing challenges of limited PCB area and currents up to hundreds of amps? Ordinary MOSFETs either have large packages or unacceptably high conduction losses. VBsemi RBE035N04R0SZN6#HB0-VB is designed for this—it integrates 40V withstand voltage, 150A ultra-high current carrying capacity, and an on-resistance as low as 1.09mΩ in a compact DFN8(5X6) package, using advanced SGT technology to allow high-power designs to balance efficiency and size without compromise.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 40V 3V 150A 1.5(mΩ) 1.09(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 40V 3V 150A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 40V 3V 150A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
- Withstand voltage 40V, meeting safety margin for low-voltage high-current applications
- Gate drive range ±20V, compatible with various drive voltages
- Threshold voltage 3V, clear and stable switching characteristics
- On-resistance 1.09mΩ (at 10V drive), extremely low loss, significantly reduced heat generation
- Maximum current 150A, sufficient for demanding power path requirements
- Package DFN8(5X6), low thermal resistance, small size, suitable for high-density layout
- Technology SGT (Shielded Gate Trench), excellent figure of merit, good switching speed and conduction loss

Domain and module applications:


- Electric Vehicle Control Units – Acts as the main battery circuit switch or pre-charge circuit, handling high current surges to ensure system stability.
- High-Power DC-DC Converters – Serves as the main power switch in synchronous rectification or full-bridge topologies, enhancing conversion efficiency with ultra-low on-resistance.
- BMS (Battery Management Systems) – Used for charge/discharge circuit control; milliohm-level internal resistance effectively reduces heat buildup under high current, improving battery safety.
- Server Power Supplies / Communication Power Supplies – Enables low-loss switching in high-current output stages, contributing to energy savings.
- Power Tools / Drones – Leverages 150A current capability and fast switching characteristics to drive high-power motors, delivering powerful output.
- Energy Storage Inverters – Efficiently handles energy flow in bidirectional conversion, reducing component temperature rise and extending system life.
- Low-Voltage High-Current Load Switches – Provides reliable on/off control for industrial control or automotive equipment, replacing multiple parallel transistors to simplify design.**In a nutshell:** RBE035N04R0SZN6#HB0-VB is not an ordinary MOSFET; it's your "low-resistance tool" and "power core" for high-current, high-density power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat