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SIR638ADP-T1-UE3-VB Product details

Product introduction:

SIR638ADP-T1-UE3-VB is a Single N-MOS optimized for low-voltage, high-current power switching scenarios. Using advanced SGT technology, it achieves an excellent balance between ultra-low on-resistance and high-speed switching capability. The DFN8(5X6) package offers superior heat dissipation and a compact footprint, making it suitable for high-power-density applications. The combination of 40V withstand voltage, 250A current capacity, and 0.8mΩ on-resistance makes it an ideal power device option for heavy-load scenarios such as server power supplies, power tools, and automotive electronics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 40V 2.5V 250A 0.8(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 40V 2.5V 250A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 40V 2.5V 250A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
- **VDS=40V**: Suitable for 12V/24V/36V systems, ample voltage spike margin, enhances system avalanche capability.
- **VGS=±20V**: Compatible with wide gate drive range, supports 4.5V~12V logic levels, can be directly controlled by MCU/driver, simplifying peripheral design.
- **Vth=2.5V (Typical)**: Moderate threshold voltage, balances noise immunity and low-voltage drive capability, adaptable to various drive circuit architectures.
- **RDS(on)=0.8mΩ @ VGS=10V**: Ultra-low on-resistance, greatly reduces conduction loss, significantly lowers full-load temperature rise, can reduce heatsink or copper area size.
- **ID=250A**: Extremely strong continuous current capability, confidently handles high-power load transients and motor stall conditions, ample margin.
- **Package DFN8(5X6)**: Low parasitic inductance, low thermal resistance, supports high-frequency switching, optimizes PCB layout space, suitable for compact high-current modules.

Domain and module applications:


- **High-Power DC-DC Converters**: Replacing traditional MOS in synchronous rectification applications can significantly improve heavy-load efficiency and reduce module temperature rise, facilitating the miniaturization of power modules.
- **Power Tools and Garden Machinery**: Extremely low internal resistance ensures high current output capability, and combined with the fast switching characteristics of SGT technology, it improves motor control response and battery life.
- **Automotive 12V/24V Electrical Systems**: 40V withstand voltage covers transient overvoltage on the vehicle bus, and 250A current capability meets the needs of heavy loads such as starter motors and PTC heaters.
- **Server and Communication Power Supplies**: High efficiency and low loss characteristics are suitable for high-density power boards, reducing heat dissipation pressure and improving system reliability.
- **Battery Protection and BMS**: Microsecond-level shutdown capability and extremely low on-state voltage drop effectively reduce self-heating of the protection board, improving the safety and energy utilization of lithium battery packs.
- **Motor Drives and Drones**: Low PWM switching losses significantly reduce driver temperature rise, supporting high-current rapid acceleration scenarios.
- **Low-Voltage High-Current Switch Circuits**: As an ideal high-side/low-side switch, suitable for applications such as automotive relay replacement and smart power distribution boxes. **Selection Summary:** SIR638ADP-T1-UE3-VB achieves a high degree of unity between ultra-low on-resistance, ultra-high current carrying capacity, and advanced package heat dissipation. It is a flagship-level choice for 40V low-voltage high-current switching applications, especially suitable for projects with stringent requirements for efficiency, power density, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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