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RS6G120CHTB1-VB Product details

Product introduction:

Are you designing a high-power-density, high-current power module with tight PCB area, yet need to continuously handle hundreds of amps? Traditional MOS transistors either have excessive conduction losses or struggle with package size. VBsemi RS6G120CHTB1-VB is designed for this—it uses advanced SGT (Shielded Gate Trench) technology to integrate 40V withstand voltage, 250A current capacity, and an on-resistance of just 0.8mΩ into a compact DFN8(5X6) package, allowing high-power conversion designs to no longer compromise on heat dissipation and space.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 40V 2.5V 250A 0.8(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 40V 2.5V 250A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 40V 2.5V 250A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N

- Voltage Rating 40V, suitable for low-voltage high-current scenarios, ample safety margin
- Gate Drive Range ±20V, compatible with wide drive voltage range, strong noise immunity
- Threshold Voltage 2.5V, clear switching characteristics, facilitates drive circuit design
- On-Resistance 0.8mΩ (at 10V Drive), extremely low conduction loss, excellent efficiency
- Maximum Current 250A, confidently handles high load surges
- Advanced SGT technology, significantly reduces switching losses and ringing, improves system reliability

Domain and module applications:


- **Power Tools/Brushless Motor Drives** – Acts as a high-power H-bridge or half-bridge switch, leveraging extremely low on-resistance and fast switching capability to effectively improve drive efficiency and response speed.
- **Automotive Electronics/Automotive DC-DC** – Withstands 40V bus voltage fluctuations, providing stable power supply for in-vehicle infotainment and ADAS sensors, ensuring reliable operation under harsh conditions.
- **Server Power Supplies/Communication Power Supplies** – Serves as the main switch in synchronous rectification or OR-ing circuits, reducing thermal loss and enabling ultra-high power density designs.
- **High-Power Battery Protection Boards** – Can quickly cut off circuits up to 250A when overcurrent or short circuit is detected, safeguarding energy storage system safety.
- **Lithium Battery PACK / Low-Voltage BMS** – Suitable for charge/discharge management of multi-cell lithium batteries; the low internal resistance characteristic significantly reduces temperature rise and extends battery life.
- **Electric Drones/Robots** – The compact DFN8(5X6) package saves space while supporting high current bursts, meeting dynamic load requirements such as rapid acceleration.
- **Supercapacitors/High-Power UPS** – Achieves low-loss, efficient control in charge/discharge switching loops, improving energy cycle utilization. **One-sentence summary:** RS6G120CHTB1-VB is not an ordinary MOSFET; it is the "power heart" and "heat dissipation master" of your low-voltage, high-current power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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