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IRFPW4468PBFXKSA1-VB Product details
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Are you still troubled by conduction losses and heat dissipation issues in high-current switching applications? VBsemi IRFPW4468PBFXKSA1-VB is the solution! This TO247 packaged N-MOSFET offers 100V withstand voltage and an ultra-high current capacity of 180A, with an on-resistance as low as 2.4mΩ, making it the "low-resistance king" for low-voltage, high-power scenarios. Using advanced SGT technology, it delivers excellent switching performance and significantly reduced losses, providing solid and reliable power support for high-intensity applications such as motor drives and power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 180A | 2.4(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 180A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Voltage Rating: 100V (covers low-voltage high-power systems, ample margin)
Drive Range: ±20V (compatible with standard 10V/12V gate drive)
Turn-On Threshold: 3V (stable threshold, strong anti-interference capability)
Ultra-Low On-Resistance: 2.4mΩ @ 10V (minimal conduction loss, significantly reduced heat generation)
High Current Capability: 180A (single device handles very high current, simplifying parallel design)
Package: TO247 (suitable for power device heat sink mounting, lower thermal resistance)
Technology: SGT (Shielded Gate Trench, superior switching speed and figure of merit)
Drive Range: ±20V (compatible with standard 10V/12V gate drive)
Turn-On Threshold: 3V (stable threshold, strong anti-interference capability)
Ultra-Low On-Resistance: 2.4mΩ @ 10V (minimal conduction loss, significantly reduced heat generation)
High Current Capability: 180A (single device handles very high current, simplifying parallel design)
Package: TO247 (suitable for power device heat sink mounting, lower thermal resistance)
Technology: SGT (Shielded Gate Trench, superior switching speed and figure of merit)
Domain and module applications：
– High-power scenarios, one device handles it all
High-power DC-DC conversion: Synchronous rectification main switch, high efficiency, low temperature rise
Motor drive control: Power tools, robots, drone ESCs, powerful output
On-board power systems: 48V/12V conversion, automotive electronic regulation, stable and reliable
UPS uninterruptible power supplies: Inverter stage power switch, strong overload capacity
Battery formation and testing equipment: High-current charge/discharge control, low loss, fast response
Power amplifier power supply: High-voltage bus switch, low internal resistance ensures signal purity
Industrial power modules: High-density power conversion, significantly reduced heat dissipation pressure
IRFPW4468PBFXKSA1-VB – High current, low internal resistance, making your power design easier!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
