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TK56A12N1,S4X-VB Product details
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Are you still troubled by severe heating and high conduction losses in high-power switching systems? VBsemi TK56A12N1,S4X-VB is here to help! This TO220F packaged single N-channel MOSFET, using advanced SGT technology, offers 120V withstand voltage and 60A high current capability, with an ultra-low on-resistance of 10mΩ, ensuring excellent heat dissipation even under high current conditions. SGT technology delivers extremely low switching losses and superior avalanche ruggedness, making it the "efficiency cornerstone" for high-voltage, high-power applications such as industrial power supplies and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 120V | 3V | 60A | 10(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 120V | 3V | 60A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 120V | 3V | 60A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Voltage Rating: 120V (ample margin, more resilient to transient spikes)
Drive Range: ±20V (compatible with standard 10V/12V gate drive)
Turn-On Threshold: 3V (typical value, clearer gate drive design)
Ultra-Low On-Resistance: 10mΩ @ 10V (extremely low conduction loss, significantly reduced temperature rise)
High Current Capability: 60A (TO220F fully isolated package, reliable heat dissipation)
Package: TO220F (fully molded insulation, no need for additional insulating pads, easy to install)
Technology Platform: SGT (Shielded Gate Trench process, superior switching performance and EMI characteristics)
Drive Range: ±20V (compatible with standard 10V/12V gate drive)
Turn-On Threshold: 3V (typical value, clearer gate drive design)
Ultra-Low On-Resistance: 10mΩ @ 10V (extremely low conduction loss, significantly reduced temperature rise)
High Current Capability: 60A (TO220F fully isolated package, reliable heat dissipation)
Package: TO220F (fully molded insulation, no need for additional insulating pads, easy to install)
Technology Platform: SGT (Shielded Gate Trench process, superior switching performance and EMI characteristics)
Domain and module applications：
– Five core scenarios, one device handles it all
Switching power supplies: Efficient synchronous rectification, LLC resonant conversion, boosting efficiency of kilowatt-level modules
Motor drives: Power tools, industrial fans, water pump controllers, smooth and powerful high-current output
On-board power supplies: DC-DC conversion, battery charging management, ensuring high reliability across a wide temperature range
UPS and inverters: High-frequency switching in the power stage, confidently handling load transients and overcurrent shocks
Battery protection and charge/discharge management: Low voltage drop, high current tolerance, providing a solid barrier for energy storage systems
TK56A12N1,S4X-VB – High voltage tolerance, low internal resistance, high current, making your power design easier!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
