中文
English
TK3R2A10PL,S4X-VB Product details
Back to previous pageProduct introduction：
TK3R2A10PL,S4X-VB is a Single N-MOSFET deeply optimized for medium-voltage, high-power switching scenarios. Using advanced SGT (Split-Gate Trench) technology, it achieves an excellent balance between low conduction loss and switching speed. The TO220F fully isolated package not only provides a good thermal path but also simplifies insulation installation requirements, facilitating system layout and batch assembly. The combination of 100V withstand voltage, 165A current carrying capacity, and 3.3mΩ on-resistance makes it a preferred device for high-current applications such as server power supplies, motor drives, and energy storage converters.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 165A | 3.3(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 165A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 3V | 165A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
VDS=100V: Suitable for 48V/72V/96V systems, covering applications such as communication power supplies, electric two-wheelers, and photovoltaic energy storage, with sufficient margin for switching spikes.
VGS=±20V: Wide gate drive voltage tolerance, compatible with 10V~15V standard drivers, can be driven directly by PWM controllers or gate driver ICs.
Vth=3V (typical): Moderate threshold voltage, strong anti-interference capability, ensures stable turn-off at high temperatures, suitable for industrial-grade applications.
RDS(on)=3.3mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces conduction loss and temperature rise under high current conditions, allowing for smaller heat sinks.
ID=165A: Ample continuous current capability, meets heavy-duty and peak surge demands, with sufficient margin for high reliability.
Package TO220F: Fully molded package eliminates the need for additional insulating pads, low thermal resistance, high mechanical strength, suitable for screw mounting to heat sinks, facilitating production and maintenance.
Technology SGT: Shielded Gate Trench structure reduces Miller capacitance, resulting in lower switching losses, supports higher frequency operation, and improves system efficiency.
VGS=±20V: Wide gate drive voltage tolerance, compatible with 10V~15V standard drivers, can be driven directly by PWM controllers or gate driver ICs.
Vth=3V (typical): Moderate threshold voltage, strong anti-interference capability, ensures stable turn-off at high temperatures, suitable for industrial-grade applications.
RDS(on)=3.3mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces conduction loss and temperature rise under high current conditions, allowing for smaller heat sinks.
ID=165A: Ample continuous current capability, meets heavy-duty and peak surge demands, with sufficient margin for high reliability.
Package TO220F: Fully molded package eliminates the need for additional insulating pads, low thermal resistance, high mechanical strength, suitable for screw mounting to heat sinks, facilitating production and maintenance.
Technology SGT: Shielded Gate Trench structure reduces Miller capacitance, resulting in lower switching losses, supports higher frequency operation, and improves system efficiency.
Domain and module applications：
High-Power DC-DC Converters: In synchronous rectification or buck/boost main switches, the 3.3mΩ ultra-low internal resistance significantly reduces conduction losses, notably improving heavy-load efficiency.
Motor Drives and Controllers: 165A continuous current covers high-power loads such as industrial motors, power tools, and drones; PWM switching characteristics are excellent, and temperature rise is controllable.
Energy Storage and Battery Management: 100V withstand voltage combined with low internal resistance, suitable for 48V battery pack charging/discharging management, protection circuits, and pre-charge circuits, reducing system power consumption.
Electric Vehicle Power Systems: Adapts to controllers for electric two-wheelers, three-wheelers, and low-speed four-wheelers; SGT technology improves high-frequency speed regulation performance and extends range.
Communication Base Station Power Supplies: Used as a rectification stage switch tube in -48V input architectures, high efficiency and low heat, increasing power supply module power density.
Photovoltaic Inverters: Used in Boost or inverter bridge arms, low on-state voltage drop reduces energy loss, supporting higher power tracking efficiency.
UPS Uninterruptible Power Supplies: High current carrying capacity handles instantaneous switching surges; TO220F package facilitates compact system design. Selection Summary: TK3R2A10PL,S4X-VB, with its 100V/165A strong current architecture, 3.3mΩ ultra-low on-resistance, and SGT process advantages, provides a cost-effective solution for medium-to-high power switching applications. Its TO220F package balances heat dissipation and isolation convenience, making it particularly suitable for industrial and energy projects with strict requirements on efficiency, reliability, and assembly efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
