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IPF021N13NM6ATMA1-VB Product details
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IPF021N13NM6ATMA1-VB is a Single N-MOSFET deeply optimized for high-power switching applications. Using advanced SGT (Split Gate Trench) technology, it combines ultra-low on-resistance with excellent switching performance. The TO263-7L package provides powerful heat dissipation and high current-carrying capacity. The robust combination of 120V withstand voltage, 190A current-carrying capability, and 2.8mΩ on-resistance makes it a preferred device for medium-to-high power applications such as server power supplies, industrial control, and automotive power conversion, especially suitable for high-end designs with strict requirements for efficiency and thermal reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Single-N | 120V | 3V | 190A | 2.8(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Single-N | 120V | 3V | 190A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Single-N | 120V | 3V | 190A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Single-N |
VDS=120V: Suitable for 48V/72V/96V and higher bus voltage systems, providing ample margin for inductive load switching and abnormal spikes, significantly reducing avalanche breakdown risk.
VGS=±20V: Wide gate drive window, compatible with standard 12V drive and various half-bridge/full-bridge driver ICs, facilitating system-level circuit design.
Vth=3V (Typical): Moderate threshold voltage, effectively suppresses dv/dt-induced false turn-on, enhances current sharing stability during multi-tube paralleling.
RDS(on)=2.8mΩ @ VGS=10V: Very low on-resistance, significantly reduces full-load loss, effectively minimizing heatsink size, improving system power density.
ID=190A: Robust continuous current capability, confidently handles high current transient surges, suitable for heavy-load applications like motors and power supplies.
Package TO263-7L: Kelvin source pin design reduces drive loop parasitic inductance, improving switching transient performance; large pad package facilitates efficient heat dissipation, enhancing long-term reliability.
Domain and module applications：
Server and Communication Power Supplies: Ultra-low on-resistance significantly improves full-load efficiency, reduces energy loss, and meets the needs of high-power-density modular power supplies.
Electric Vehicle Onboard Chargers and DC-DC Converters: 120V withstand voltage covers mainstream battery voltage platforms, and low thermal resistance packaging adapts to harsh in-vehicle temperature environments.
Industrial Motor Drives and Inverters: 190A high current capability combined with the fast switching characteristics of SGT technology reduces PWM losses and enhances controller output and reliability.
Energy Storage and Inverter Systems: Suitable for battery charge/discharge management, MPPT, and grid-tied inverter topologies; low on-state voltage drop improves system round-trip efficiency.
High-Power DC-DC Synchronous Rectification: Replaces traditional Schottky diodes or early MOSFETs, improving heavy-load efficiency by 2~3%, aiding module miniaturization and heat dissipation simplification.
Power Tools and Garden Machinery: Maintains low temperature rise under high current surges, enhancing equipment continuous operation time, adapting to high-vibration, high-load conditions.
Selection Summary: The IPF021N13NM6ATMA1-VB achieves an excellent balance between ultra-low on-resistance, high current carrying capacity, and high voltage endurance. Leveraging SGT technology and the TO263-7L package, it is a high-performance benchmark for 120V-level high-power switching applications, especially suitable for projects with stringent requirements on efficiency, thermal design, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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