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IPF019N12NM6ATMA1-VB Product details

Product introduction:

**Product Introduction** Are you designing a high-power server power supply or a high-end motor driver, facing a 120V bus voltage and peak currents close to 200A? Ordinary MOSFETs either lack sufficient voltage withstand capability or suffer from high conduction losses that overwhelm the heatsink. VBsemi IPF019N12NM6ATMA1-VB is designed precisely for this – it is based on advanced SGT technology, integrating a 120V withstand voltage, 190A current-carrying capability, and an ultra-low on-resistance of 2.8mΩ into a TO263-7L high-current package, allowing high power density designs without compromise.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263-7L Single-N 120V 3V 190A 2.8(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263-7L Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263-7L Single-N 120V 3V 190A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263-7L Single-N 120V 3V 190A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263-7L Single-N
- Voltage Rating 120V, covers 48V systems and 100V-class applications, providing ample safety margin
- Gate Drive Range ±20V, compatible with various drive circuits, strong gate voltage overshoot immunity
- Threshold Voltage 3V, clear switching characteristics, excellent anti-interference performance
- On-Resistance 2.8mΩ (at 10V drive), extremely low loss in high current scenarios
- Maximum Current 190A, combined with low thermal resistance package, capable of high power output
- Utilizes SGT (Shielded Gate Trench) technology, optimizing the balance between switching speed and conduction loss

Domain and module applications:


- **Server/Communication Power Supplies** – Used as synchronous rectification or primary side switches, significantly reducing conduction losses and improving overall efficiency.
- **Power Tools/Garden Machinery** – High current carrying capacity combined with low internal resistance drives high-power brushless motors, extending runtime.
- **Onboard DC-DC Converters** – 120V withstand voltage handles battery bus fluctuations, SGT technology ensures fast switching, reducing ringing.
- **Motor Drives/Controllers** – 190A high current margin adapts to shock conditions like stalling and startup, improving system reliability.
- **UPS Uninterruptible Power Supplies** – Undertakes critical switching in inverter stages and battery management circuits, reducing thermal losses, shrinking heatsink size.
- **Battery Formation/Testing Equipment** – Good current sharing characteristics when paralleled, low on-resistance reduces power stage heat generation, improving equipment lifespan.
- **High-Power Charging Modules** – Used in buck/boost topologies, replacing traditional Schottky diodes, significantly improving conversion efficiency.
In a nutshell: The IPF019N12NM6ATMA1-VB is not an ordinary MOS tube; it is the "low-loss core" and "current champion" for your high-power, high-voltage designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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