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IPF018N10NM5LF2ATMA1-VB Product details
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Struggling with conduction loss and heat generation issues in high-current switching applications? VBsemi IPF018N10NM5LF2ATMA1-VB is here to help! This TO263-7L packaged high-power N-MOSFET, with an ultra-low on-resistance of 1.2mΩ, can easily handle a massive 250A current, significantly reducing conduction losses compared to similar products. Using advanced SGT technology, it offers fast switching speeds and excellent FOM (Figure of Merit). With a 100V withstand voltage, it covers a wide range of applications including communication power supplies, motor drives, and energy storage inverters, making it the 'efficiency champion' for power designers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Single-N | 100V | 3V | 250A | 1.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Single-N | 100V | 3V | 250A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Single-N | 100V | 3V | 250A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Single-N |
Voltage Rating: 100V (ample margin, safe and reliable)
Drive Range: ±20V (compatible with various drive voltages)
Threshold Voltage: 3V (friendly for logic level drive)
Ultra-Low On-Resistance: 1.2mΩ @ 10V (extremely low conduction loss)
High Current Capability: 250A (large package, high energy)
Package: TO263-7L (suitable for high power density design)
Technology: SGT (Shielded Gate Technology, low switching loss, better EMI)
Drive Range: ±20V (compatible with various drive voltages)
Threshold Voltage: 3V (friendly for logic level drive)
Ultra-Low On-Resistance: 1.2mΩ @ 10V (extremely low conduction loss)
High Current Capability: 250A (large package, high energy)
Package: TO263-7L (suitable for high power density design)
Technology: SGT (Shielded Gate Technology, low switching loss, better EMI)
Domain and module applications：
– Six High-Power Scenarios, One Chip Handles All
Communication Power Supplies: 48V rectifier modules, high-voltage DC-DC, significant efficiency improvement
Motor Drive: Power tools, drone ESCs, stable and reliable high current output
Energy Storage Inverter: Photovoltaic inverters, BMS battery management, strong current carrying capability
Automotive Electronics: Onboard DC-DC, PTC heater control, shock-resistant, high-temperature tolerant
Server Power Supplies: High-efficiency PFC and LLC topologies, contributing to energy saving and emission reduction
Industrial Control: High-power relay replacement, solid-state switches, fast response, long life
IPF018N10NM5LF2ATMA1-VB – Ultra-low resistance, high current, empowering your power design with ease!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
