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IPF011N08NM6ATMA1-VB Product details

Product introduction:

IPF011N08NM6ATMA1-VB is a Single N-MOSFET deeply optimized for high-current, low-voltage switching applications. Using advanced SGT (Split Gate Trench) technology, it achieves an excellent balance between ultra-low on-resistance and high switching speed. The TO263-7L package provides superior heat dissipation and high current-carrying capacity, suitable for high power density applications. The combination of 100V withstand voltage, 250A current-carrying capability, and 1.2mΩ on-resistance makes it an ideal core power device for high-power stages such as server power supplies, motor drives, and energy storage systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263-7L Single-N 100V 3V 250A 1.2(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263-7L Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263-7L Single-N 100V 3V 250A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263-7L Single-N 100V 3V 250A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263-7L Single-N

VDS=100V: Suitable for 48V~72V systems, covering 24V/36V industrial buses, providing ample voltage spike margin, significantly reducing avalanche breakdown risk.
VGS=±20V: Compatible with standard 10V~12V gate drives, can be directly controlled by dedicated driver ICs or MCUs with drivers, no complex level shifting required.
Vth=3V (Typical): Moderate threshold voltage, strong anti-interference capability, ensures full conduction region under 10V drive, adaptable to various drive schemes.
RDS(on)=1.2mΩ @ VGS=10V: Extremely low on-resistance, minimal conduction loss at full load, significantly reducing heatsink size and system temperature rise.
ID=250A: Very ample continuous current capability, can handle transient high current conditions like motor stall and energy storage surges, high reliability.
Package TO263-7L: Large lead frame enhances current and heat dissipation capability, compatible with standard SMT processes, suitable for high power density designs.
Technology SGT: Charge balance structure reduces Miller capacitance, lower switching losses, maintains high efficiency in both synchronous rectification and hard-switching scenarios.

Domain and module applications:


High-Power DC-DC Converters: Replaces multiple parallel MOSFETs in synchronous rectification or full-bridge topologies, reducing component count and board area, improving heavy-load efficiency.
Server and Communication Power Supplies: In 48V input bus buck-boost circuits, low on-resistance reduces losses, high voltage withstand margin ensures stable operation under harsh conditions.
Motor Drive and Control: Supports 48V~72V brushless DC motors and servo drives, low PWM switching losses, significantly reduced controller temperature rise, longer lifespan.
Energy Storage and Battery Management: Suitable for ESS battery cluster charge/discharge switches, 250A current capacity meets high-rate charge/discharge needs, low internal resistance reduces BMS self-heating.
UPS Uninterruptible Power Supplies: Provides high-efficiency power paths in inverter stages and bypass switches, fast switching characteristics support high-frequency design, shortening response time.
Automotive Electronic Auxiliary Systems: 100V withstand voltage covers 24V vehicle bus transient spikes, wide operating temperature range adapts to harsh environments like engine compartments.
Power Tools and Industrial Equipment: High voltage and high current characteristics are suitable for high-power lithium battery tools, electric forklifts, etc., significantly improving output capability and continuous runtime.
Selection Summary: The IPF011N08NM6ATMA1-VB achieves a balance between ultra-low on-resistance, high current carrying capacity, and high-reliability packaging. It is a high-performance general-purpose choice for 100V high-power switching applications, especially suitable for projects with clear requirements for low loss, high power density, and harsh thermal environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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