中文
English
SUM50010EL-GE3-VB Product details
Back to previous pageProduct introduction：
Troubled by high heat generation and high conduction loss in high-current switching solutions? Let VBsemi SUM50010EL-GE3-VB solve your worries! This TO263-packaged single N-MOSFET, using advanced SGT technology, supports a massive 190A current with an on-resistance as low as 2.1mΩ, making it the 'conduction king' for low-voltage, high-power scenarios. With a 60V withstand voltage and a ±20V wide gate drive range, it easily handles high-intensity applications such as motor drives and power conversion, providing an efficient and reliable power conversion core for your design.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 190A | 2.1(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 190A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 190A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Voltage Rating: 60V (Sufficient margin for high-power scenarios, safe and reliable)
Drive Range: ±20V (Compatible with 3.3V/5V/12V and other drive levels)
Threshold Voltage: 3V (Logic level controllable, clear switching characteristics)
Ultra-Low On-Resistance: 2.1mΩ @ 10V (Extremely low conduction loss, significantly reduced heat generation)
High Current Capability: 190A (Ultra-high current carrying capacity, suitable for heavy load surges)
Package: TO263 (D2PAK, excellent heat dissipation, suitable for high-current surface mounting)
Technology: SGT (Shielded Gate Trench, low switching loss, excellent figure of merit)
Drive Range: ±20V (Compatible with 3.3V/5V/12V and other drive levels)
Threshold Voltage: 3V (Logic level controllable, clear switching characteristics)
Ultra-Low On-Resistance: 2.1mΩ @ 10V (Extremely low conduction loss, significantly reduced heat generation)
High Current Capability: 190A (Ultra-high current carrying capacity, suitable for heavy load surges)
Package: TO263 (D2PAK, excellent heat dissipation, suitable for high-current surface mounting)
Technology: SGT (Shielded Gate Trench, low switching loss, excellent figure of merit)
Domain and module applications：
– Six High-Power Scenarios, One Solution
Power Conversion: Synchronous rectification, DC-DC modules, higher efficiency, lower temperature rise
Motor Drives: Power tools, robot motors, stable and powerful high-current output
On-Board Power: Automotive DC-DC, load switches, impact-resistant, high reliability
Battery Protection: Energy storage systems, traction batteries, instantaneous fault current disconnection
Server Power Supplies: High power density design, significant conduction loss optimization
Industrial Control: UPS, inverters, power regulation, robust and fast response
SUM50010EL-GE3-VB – Ultra-low resistance, ultra-high current, empowering your power design!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
