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IPB057N15NM6ATMA1-VB Product details

Product introduction:

IPB057N15NM6ATMA1-VB is a Single N-MOS meticulously optimized for medium-to-high voltage power switching scenarios, using advanced SGT (Shielded Gate Trench) technology to achieve an excellent balance between conduction loss, switching speed, and reliability. The TO263 package offers superior heat dissipation and current carrying capability, suitable for high-power, high-reliability applications. The powerful combination of 150V withstand voltage, 140A continuous current, and 5.6mΩ on-resistance makes it a preferred power device for communication power supplies, industrial control, motor drives, and automotive systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 150V 3.5V 140A 5.6(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 150V 3.5V 140A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 150V 3.5V 140A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N

- **VDS=150V**: Suitable for 48V~110V systems, provides ample voltage spike margin, significantly reduces avalanche breakdown risk, and improves system robustness.
- **VGS=±20V**: Wide drive window, compatible with standard gate drive circuits, supports 10V~12V drive levels, facilitating direct parallel use.
- **Vth=3.5V (Typical)**: Moderate threshold voltage, balancing noise immunity and drive compatibility, suitable for industrial PWM control.
- **RDS(on)=5.6mΩ @ VGS=10V**: Ultra-low on-resistance, extremely low conduction loss under high current conditions, effectively reduces temperature rise and heat sink size.
- **ID=140A**: Ample continuous current margin, meets peak current requirements for high-power density designs, suitable for heavy-load startup and short-term overload scenarios.
- **Package TO263**: Large pin pad design, low thermal resistance, short heat dissipation path, supports sustained high-power output, and facilitates automated SMT production.
- **Technology SGT**: Shielded gate structure reduces Miller capacitance, lowers switching losses, supports high-frequency operation, and improves body diode reverse recovery characteristics.

Domain and module applications:


- **Communication Power Systems**: Used in low-voltage, high-current rectification stages and PFC circuits. Low on-resistance improves conversion efficiency, while high voltage margin ensures safety during grid fluctuations.
- **Industrial Motor Drives**: Suitable for 48V~72V DC bus motor control at the 150V voltage level. PWM switching losses are low, and inverter temperature rise is significantly improved.
- **Power Tools and Two-Wheeler Controllers**: High current capability matches high-torque startup requirements. The TO263 package facilitates layout on metal substrates for enhanced heat dissipation.
- **Energy Storage and Battery Protection**: High voltage withstand and low impedance characteristics are suitable for charge/discharge switches in lithium/lead-acid battery packs, reducing protection board heating and supporting high-current charging/discharging.
- **DC-DC Converters**: Replaces multiple parallel MOSFETs in synchronous rectification or buck/boost topologies, simplifying design and improving heavy-load efficiency.
- **On-Board Auxiliary Power Supplies**: When upgrading from 12V/24V systems to a 48V architecture, the 150V voltage withstand provides ample margin, and the wide safe operating area adapts to harsh automotive environments.
- **Solar Micro-Inverters**: Used in high-frequency power stages and bus switches. SGT technology reduces switching oscillations and improves overall electromagnetic compatibility. **Selection Summary**: The IPB057N15NM6ATMA1-VB offers excellent conduction loss advantages and robust thermal reliability in high-current, medium-to-high voltage switching applications. It is a cost-effective power switch solution for the 150V voltage platform, particularly suitable for industrial and automotive projects with strict requirements for efficiency, power density, and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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