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MCB2D8N10YHR-TP-VB Product details

Product introduction:

MCB2D8N10YHR-TP-VB is a Single N-MOS deeply optimized for high-power low-voltage switching scenarios. The SGT process balances ultra-low conduction losses and excellent switching performance, while the TO263 package achieves an excellent balance between high current-carrying capacity and heat dissipation capability. The combination of 100V withstand voltage, 180A current-carrying capacity, and 2.1mΩ on-resistance makes it an ideal power switch option for high-current applications such as server power supplies, automotive systems, and industrial motor control, especially suitable for occasions with stringent requirements for efficiency and thermal management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 100V 3V 180A 2.1(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 100V 3V 180A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 100V 3V 180A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
VDS=100V: Suitable for 24V/36V/48V and some 60V systems, provides ample voltage spike margin, significantly enhances system avalanche ruggedness.
VGS=±20V: Compatible with 10V and higher drive levels, flexible for use with dedicated gate drivers or general-purpose PWM controllers.
Vth=3V (Typical): Moderate threshold voltage effectively suppresses dv/dt induced turn-on, enhances current sharing safety in multi-device parallel configurations.
RDS(on)=2.1mΩ @ VGS=10V: Ultra-low on-resistance, minimal full-load conduction loss, significantly reduces temperature rise and heat sink size.
ID=180A: High continuous current capability, confidently handles surge current demands in high-power inverters, DC bus switches, and other heavy-load scenarios.
Package TO263: Combines D2PAK-level heat dissipation with good SMT process compatibility, suitable for high power density module design.

Domain and module applications:


High-power DC-DC converters: Extremely low on-resistance in synchronous rectification or primary side switches, significantly improving full-load efficiency, reducing thermal stress, and aiding module power density enhancement.
Energy storage and battery management systems: High voltage margin to handle battery pack voltage fluctuations, ultra-low internal resistance reduces protection board heat generation, suitable for large-capacity lithium battery charge-discharge circuits.
Motor drives and inverters: SGT technology provides fast switching characteristics, more stable operation at PWM frequencies, simultaneously reducing motor winding temperature rise and controller losses.
Server and communication power supplies: 100V withstand voltage covers intermediate bus architecture, 180A high current capability meets multi-phase power supply design requirements, improving overall system reliability.
On-board auxiliary power conversion: Wide safety margin to handle 12V/24V vehicle transient overvoltage, low conduction losses improve combined light-load and heavy-load operating efficiency.
Industrial power tools and robots: TO263 package facilitates high-current heat conduction, robust impact resistance adapts to harsh conditions like frequent start-stop and stall overcurrent.
UPS and backup power supplies: Reliable power channel design supports continuous high current output, ensuring voltage stability during critical load switching. Selection Summary: MCB2D8N10YHR-TP-VB, with its ultra-low on-resistance, high current carrying capacity, and high voltage margin as core advantages, achieves an excellent balance between power loss, thermal design, and system reliability. It is a high-performance general-purpose choice for 100V-level high-power switching applications, especially suitable for projects with strict requirements for efficiency, temperature rise, and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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