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SQJA80EP-T1_GE3-VB Product details
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You are designing a high-power-density DC-DC converter or motor drive module, but facing the dual challenges of tight PCB space and heat runaway. Ordinary MOS tubes either have excessive conduction losses or the package limits current-carrying capacity. VBsemi SQJA80EP-T1_GE3-VB is born for this—it uses a compact LFPAK56 surface-mount package yet achieves 60V withstand voltage, 270A maximum current, and only 1.2mΩ on-resistance, compressing the ultimate performance of high current and low loss into a compact volume, allowing high-power power supply designs to no longer compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 2V | 270A | 1.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 2V | 270A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 2V | 270A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Voltage Rating 60V, easily handles medium and low voltage industrial and automotive applications
Gate Drive Range ±20V, compatible with multiple logic level drives
Threshold Voltage 2V, low drive threshold, convenient for low-voltage control
On-Resistance 1.2mΩ (at 10V drive), extremely low loss, significantly reduced heat generation
Maximum Current 270A, small package can handle ultra-high current
SGT Technology (Shielded Gate Trench), optimizes switching speed and conduction performance, reduces Qgd, improves efficiency
Gate Drive Range ±20V, compatible with multiple logic level drives
Threshold Voltage 2V, low drive threshold, convenient for low-voltage control
On-Resistance 1.2mΩ (at 10V drive), extremely low loss, significantly reduced heat generation
Maximum Current 270A, small package can handle ultra-high current
SGT Technology (Shielded Gate Trench), optimizes switching speed and conduction performance, reduces Qgd, improves efficiency
Domain and module applications：
High-power synchronous rectification DC-DC modules – As the main switch, replacing traditional Schottky diodes with extremely low on-resistance, significantly improving conversion efficiency and reducing temperature rise.
Lithium battery protection boards / BMS – Quickly cutting off the circuit during overcurrent or short circuit, supporting up to 270A pulse current, suitable for energy storage battery packs and power tools.
On-board DC-DC converters / 48V mild hybrid systems – Withstanding automotive voltage fluctuations, providing a stable and efficient power switching solution.
BLDC motor drivers – Utilizing low on-resistance and high current capability to drive high-power brushless motors, achieving smooth speed regulation and low heat generation operation.
Server power supplies / Communication power supplies – In high-density board-level power supply scenarios, effectively reducing thermal design pressure and improving system reliability.
Electric forklifts / Intelligent handling equipment – Coping with frequent start-stop and heavy load impacts, maintaining excellent thermal performance and long-term stability. One sentence summary: SQJA80EP-T1_GE3-VB is not an ordinary MOS tube; it is the 'core of efficiency' and 'current engine' for your high power density design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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