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BUK7J2R4-80MX-VB Product details
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Still troubled by conduction losses and heat dissipation issues in high-current switching circuits? Let VBsemi BUK7J2R4-80MX-VB solve your problems! This LFPAK56-packaged N-MOS tube, using advanced SGT process, has an ultimate current of up to 270A and an on-resistance of only 1.2mΩ, resulting in minimal heat generation. The 60V withstand voltage covers a variety of industrial and automotive-grade applications. The ultra-low impedance combined with high-speed switching characteristics allows power conversion efficiency to easily break through bottlenecks, making it a "performance beast" for heavy-load power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 2V | 270A | 1.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 2V | 270A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 60V | 2V | 270A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Voltage Rating: 60V (Sufficient margin, stable and reliable)
Drive Range: ±20V (Compatible with multiple logic level drives)
Threshold Voltage: 2V (Fast response even with low-voltage drive)
Ultra-Low On-Resistance: 1.2mΩ @ 10V (Extremely low conduction loss, significantly reduced temperature rise)
High Current Capability: 270A (Ultra-high current handling, easily copes with surge loads)
Package: LFPAK56 (Low-profile design, short heat dissipation path, suitable for high-density layout)
Technology: SGT (Shielded Gate Trench structure, low switching loss, strong EMI immunity)
Drive Range: ±20V (Compatible with multiple logic level drives)
Threshold Voltage: 2V (Fast response even with low-voltage drive)
Ultra-Low On-Resistance: 1.2mΩ @ 10V (Extremely low conduction loss, significantly reduced temperature rise)
High Current Capability: 270A (Ultra-high current handling, easily copes with surge loads)
Package: LFPAK56 (Low-profile design, short heat dissipation path, suitable for high-density layout)
Technology: SGT (Shielded Gate Trench structure, low switching loss, strong EMI immunity)
Domain and module applications：
– Six Hot Scenarios, One Chip Covers All
High-performance DC-DC conversion: Synchronous rectification and low-voltage high-current output stages, significantly improving efficiency
Motor drive control: Power tools, drones, robot ESCs, stable high-current output
Automotive electronics: On-board power supplies, battery management, body control, vibration and high temperature resistant
Server power modules: Power switches under 12V/48V architecture, greatly reduced thermal stress
Energy storage and battery protection: Large capacity lithium battery charge-discharge management, faster fault current interruption
Industrial power supplies and welding equipment: High-power switching conversion, stable, reliable, and durable. BUK7J2R4-80MX-VB – Ultra-high current, ultra-low impedance, making your heavy-load power supply design more relaxed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
