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SQJ138ER-T1_GE3-VB Product details
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The SQJ138ER-T1_GE3-VB is a Single N-MOSFET deeply optimized for low-voltage, high-power switching applications. Using advanced SGT technology, it achieves an excellent balance between ultra-low on-resistance and high switching speed. The LFPAK56 package offers superior heat dissipation and low parasitic parameters, making it suitable for high-density current output designs. The combination of 40V withstand voltage, 150A current-carrying capacity, and 0.7mΩ on-resistance makes it an ideal power-level option for high-current applications such as server power supplies, automotive electrical systems, and industrial-grade DC-DC converters, especially for projects with stringent efficiency and temperature rise requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
VDS=40V: Suitable for 12V/24V/36V systems, providing sufficient margin for switching voltage spikes, effectively reducing avalanche breakdown risk, and improving system reliability.
VGS=±20V: Compatible with 3.3V~12V drive voltages, can be directly connected to MCU/PMIC or dedicated gate drivers, simplifying peripheral circuit design.
Vth=3V (typical): Moderate threshold voltage, balancing noise immunity and fast turn-on characteristics, aiding current sharing and stable conduction when multiple tubes are paralleled.
RDS(on)=0.7mΩ @ VGS=10V: Ultra-low on-resistance, greatly reducing full-load conduction losses, minimizing heatsink requirements, and increasing power density.
ID=150A: Extremely strong continuous current capability, easily handling high current surges like motor startup and short circuits, suitable for high-power loads.
Package LFPAK56: Low thermal resistance, low package inductance, supports high-current high-frequency switching, occupies less board area than traditional DPAK, and offers better heat dissipation.
Technology SGT (Split Gate Trench): Optimizes gate charge and Miller plateau, significantly reducing switching losses, suitable for high-frequency PWM applications.
Domain and module applications：
High-power DC-DC Converter: In the low-side synchronous rectification application, the 0.7mΩ on-resistance reduces losses to an extremely low level, significantly improving heavy-load efficiency and aiding module miniaturization.
Server and Telecom Power Supplies: The 40V withstand voltage covers multiple output bus specifications; the 150A high current carrying capacity meets CPU/GPU power phase requirements, improving overall system energy efficiency.
Automotive Electrical Systems: Suitable for power distribution, body control, and auxiliary drives in 12V/24V vehicle networks; wide SOA and low thermal resistance ensure reliable operation in harsh environments.
Power Tools and Low-Voltage Motor Drives: Extremely low internal resistance reduces PWM chopping losses; high current margin handles stall and startup surges, extending tool runtime and lifespan.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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