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SQJ128ELP-T1_GE3-VB Product details
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Still struggling with conduction loss and heat dissipation in low-voltage, high-current applications? The VBsemi SQJ128ELP-T1_GE3-VB is here to help! This LFPAK56-packaged N-MOSFET, using advanced SGT technology, offers 40V withstand voltage to handle various low-voltage, high-power scenarios, with an on-resistance as low as 0.7mΩ (@10V)—a true 'milliohm-level' current channel. Its massive 150A current capability makes it excel in motor drives, power conversion, and more, significantly reducing heat generation—a true 'efficiency tool' for power engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N |
Voltage Rating: 40V (Ample margin for low-voltage systems, safe and reliable)
Drive Range: ±20V (Compatible with 3.3V/5V/12V drives)
Threshold Voltage: 3V (Reliable triggering with standard logic levels)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (Minimal conduction losses, low thermal stress)
High Current Capability: 150A (High current handling, suitable for high-power density designs)
Package: LFPAK56 (Low thermal resistance, strong heat dissipation, suitable for SMD)
Technology: SGT (Shielded Gate Trench, low switching losses, excellent figure of merit)
Drive Range: ±20V (Compatible with 3.3V/5V/12V drives)
Threshold Voltage: 3V (Reliable triggering with standard logic levels)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (Minimal conduction losses, low thermal stress)
High Current Capability: 150A (High current handling, suitable for high-power density designs)
Package: LFPAK56 (Low thermal resistance, strong heat dissipation, suitable for SMD)
Technology: SGT (Shielded Gate Trench, low switching losses, excellent figure of merit)
Domain and module applications：
– Six Hot Scenarios, One Chip Covers All
Motor Drive: Power tools, drone ESCs, powerful high-current output
Power Conversion: Synchronous rectification, DC-DC modules, higher efficiency, lower temperature rise
Vehicle Systems: Automotive electronics, headlight control, shock-resistant, high-temperature resistant, stable and reliable
Battery Protection: Energy storage and power battery management, fast fault current cut-off, safeguarding safety
Electric Equipment: Robots, electric bicycles, high power density design, saving space
Server Power Supplies: Low-voltage high-current bus switches, low voltage drop, more energy-efficient systemSQJ128ELP-T1_GE3-VB – Ultra-low resistance, ultra-high current, making your power design more relaxed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
